藉由濺鍍不同功函數的鈦、鋁、鈀等金屬薄膜於染料敏化太陽電池的導電玻璃，來改善導電玻璃與多孔性二氧化鈦光電極的介面電阻，並且有效抑制電子與染料、電解液發生逆向複合的機會。
研究結果顯示，具有高穿透性的低功函數鈦金屬薄膜能有效提升電池元件的特性，鈦金屬高穿透率的特性能挹注太陽入射光捕獲效率；低功函數的性質能與多孔性二氧化鈦光電極形成歐姆接觸且具有阻障層的效果，有效地幫助電子傳輸避免逆向反應的發生。濺鍍金屬鈦薄膜的染料敏化太陽電池相較於未濺鍍金屬的標準電池，在短路電流密度上提升約24%，且轉換效率可達4.65%，相較於標準電池效率(3.9%)改善約20%，在量子效率的表現上，亦比濺鍍金屬鋁、鈀薄膜的電池有顯著地提升。

In order to improve the interfacial conductance and suppress interfacial recombination between TiO2 porous layer and F-doped SnO2 transparent conductive layer (FTO) of dye-sensitized solar cells (DSSCs), three different work function metal titanium (Ti), aluminum (Al), palladium (Pd) thin-film were deposited by sputtering on FTO. Only for high transmittance and low work function metal Ti can enhance DSSCs photovoltaic properties. High transmittance of Ti thin-film helps the light harvesting efficiency (LHE), and low work function of Ti (4.33 eV), after contacted with porous TiO2 layer was formed proper Ohmic contact and blocking layer. It could help electrons transport into FTO smoothly and prevent the back reaction. The Ti-deposited thin film DSSCs give the significantly improvement of the short-circuit photocurrent density (Jsc) about 24% over that of standard (bare-FTO) cell, finally
resulting in a 4.65% energy conversion efficiency (η), which is about 20% higher than that of standard one. In incident monochromatic photon-to-current conversion
efficiency (IPCE) spectra, Ti-deposited DSSCs also reveal higher value than Al and Pd-deposited DSSCs.

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