本文中以CMOS-MEMS 0.35µm 2-Poly-4-Metal製程實現低驅動電壓設計之射頻微機電開關，利用輔助質量塊的新型結構設計，此設計有效降低了開關的吸附電壓(Pull-in Voltage) ，同時維持相同等級的結構共振頻率以及開關切換時間。在相同的初始間隙、靜電力作用面積、彈簧剛性等條件下，將無輔助質量塊設計之“單級(Single-Stage)”結構與具有輔助質量塊設計之“雙級(Two-Stage)”結構作比較，可以得到輔助質量塊的設計使開關的吸附電壓有效降低40%以上。首先介紹本開關結構的設計過程與致動機制，接著由吸附效應的理論出發，推導出雙級彈簧質量塊系統的吸附效應理論公式。模擬方面則利用有限元素分析模擬軟體模擬結構在固定偏壓下的位移情形，並得到開關的吸附效應特性曲線，同時在相同條件下比較出本文中雙質量塊系統相較於傳統單質量塊系統在吸附電壓上改善的情形。另一部分則探討雙級彈簧質量塊系統的設計對開關共振頻率造成的影響。量測方面則介紹各個不同的量測架設以及結果，包括:結構平整度的量測、吸附電壓的量測、切換時間的量測，以及射頻特性的量測。由量測結果得到開關吸附電壓為25V，驅動電壓為50V，切換時間為60µs，回復時間為95µs。開關在1GHz時隔離度為37.27dB，當以驅動電壓驅動開關發生吸附效應後，開關在1GHz的隔離度變為23.75dB。

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