以CMOS-MEMS製程平台實現高性能微機械共振器電路

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研究生：	陳文健 Chen, Wen-Chien
論文名稱：	以CMOS-MEMS製程平台實現高性能微機械共振器電路 Performance Enhancement of Integrated Micromechanical Resonators Using Generalized CMOS-MEMS Platforms
指導教授：	方維倫 Weileun Fang 李昇憲 Li, Sheng-Shian
口試委員:	楊燿州徐文祥陳國聲羅炯成 Dana Weinstein Whsu, Wen-Syang Lo, Chiung
學位類別：	博士 Doctor
系所名稱：	工學院 - 動力機械工程學系 Department of Power Mechanical Engineering
論文出版年：	2013
畢業學年度：	101
語文別：	英文
論文頁數：	208
中文關鍵詞：	金氧半導體微機電、射頻微機電、製程平台、全整合式、電容式、微機械共振器、甚高頻、吸附效應、次微米、頻率調控、全差分、二氧化矽結構、音叉、方形板、體聲波、高Q值、溫度補償、複合結構
外文關鍵詞：	CMOS-MEMS, RF-MEMS, platform, fully-integrated, capacitively-transduced, micromechanical resonator, VHF, pull-in, deep-submicron, frequency tuning, fully-differential, oxide structure, tuning fork, square plate, bulk acoustic, High-Q, temperature compensation, composite structure
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金氧半導體微機電(CMOS-MEMS)技術藉由CMOS製程能同時於單一晶片上(On-Chip)完成積體電路IC與MEMS元件之製作，具有縮減面積、低雜訊，及穩定的標準化製程…等優點。本論文即採用此整合式技術開發多種具備優異性能的電容式(Capacitively-transduced)高頻(HF)即甚高頻(VHF)微機械共振器，應用於感測器、時基(timing reference)及射頻(Radio Frequency, RF)等元件。為了達到此研究目標，本論文成功開發二氧化矽(SiO2)濕式蝕刻(wet etching)及金屬(Metal)濕式蝕刻(wet etching)此兩種同時與0.35 m 2P4M及0.18 m 1P6M CMOS製程相容之懸浮後製程(releasing post-process)，並分別製作出多種結構設計與不同材料組成的金屬型式以及二氧化矽型式之整合式微機械共振器。除了開發製程平台，本論文同時致力於MEMS共振器之性能強化；藉由(1)間隙(Gap)縮減機制、(2)高Q值材料與細小支撐結構、(3)二氧化系與金屬之複合材料、(4)獨特結構、(5)陣列式共振器與體模態振動，及(6)全差分式(Fully-differential)電性架構之設計；分別改善共振器的關鍵問題如運動阻抗、品質因子、熱穩定、頻率調控、功率負載能力與feedthrough效應，成功製作出相較其他文獻之元件，具有相對低運動阻抗、高Q值、溫度補償能力、類線性頻率調控機制、高功率負載能力及大訊雜比之CMOS-MEMS微機械共振器。此外；本論文亦發展一套通用被動式溫度補償理論模型，可設計複合結構體模態共振器之溫度係數。本論文增強CMOS-MEMS微機械共振器性能之成果將有助於未來整合式微機械震盪器(Oscillator)之設計，並應用於消費性電子產品中之時基(Timing reference)與頻率參考元件。

The CMOS-MEMS technology with many advantages, including smaller footprints size, without noise from bond pad, and standard foundry process, is utilized in this dissertation to develop various capacitively-transduced HF/VHF micromechanical resonators with several unique performances targeted for sensor, timing reference, and RF applications. To attain this goal, two generalized releasing post-process, such as oxide wet etching and metal wet etching techniques, compatible with 0.35 m 2P4M and 0.18 m 1P6M CMOS processes, were successfully developed to fabricated metal-type and oxide-type integrated resonators, respectively, with diverse structural designs as well as different material configurations. In addition to post-process development, this dissertation attend to improve main consideration of MEMS resonator design issues, such as motional impedance (Rm), quality factor (Q), thermal stability, frequency tuning, power handling capability, and feedthrough cancellation, through (1)gap reduction mechanism, (2)high-Q material and tiny-support, (3)oxide-metal composite, (4)elegant structural design, (5)resonator-array and bulk mode vibration, and (6)fully-differential electric setup, respectively, successfully demonstrating CMOS-MEMS resonators with better characteristics of relative low-Rm, high-Q, temperature compensated capability, quasi-linear frequency tuning ability, high power handling, large signal to noise ratio, than previous CMOS-MEM works. In addition, this dissertation also derive a generalized theoretical model of passive temperature compensation for composite bulk mode resonators, capable of further controlling its temperature coefficient of frequency (TCf) Such performance improved results might benefit the future integrated micromechanical oscillator design for timing or frequency reference in consumer electronics.

ABSTRACT…………IV
LIST OF FIGURES    X
LIST OF TABLES    XXIII

CHAPTER 1    INTRODUCTION    1
1.1    IC-COMPATIBLE MEMS TECHNOLOGIES    3
1.2    CMOS-MEMS TECHNOLOGIES    5
1.3    CONTRIBUTION    7
1.4    OVERVIEW    9

CHAPTER 2    CMOS-MEMS PLATFORM    12
2.1    INTRODUCTION    12
2.2    MERITS OF CMOS-MEMS PLATFORM    13
2.3    COMPOSITE RESONATOR MODELING AND OPERATION    18
2.4    CMOS READOUT CIRCUITRY    24
2.5    FABRICATION    27
2.6    EXPERIMENTAL RESULTS    34
2.7    CONCLUSION    46

CHAPTER 3    LOW MOTIONAL IMPEDANCE CMOS-MEMS RESONATORS  47
3.1    INTRODUCTION    47
3.2    CMOS-MEMS BEAM-ARRAY RESONATORS WITH LOW MOTIONAL 
       IMPEDANCE    49
3.2.1  Pull-In Induced Gap Reduction and Boundary 
        Condition Modulation    50
3.2.2  Experimental Results    52
3.2.2.1    CMOS-MEMS Fabrication and Results    52
3.2.2.2    Measurement Results    57
3.3    CMOS-MEMS FREE-FREE BEAM RESONATORS WITH HIGH Q AND 
       LOW MOTIONAL IMPEDANCE    59
3.3.1    Pull-In Induced Gap Reduction and Decoupling 
         Concept    60
3.3.2    Resonator Operation and Modeling    62
3.3.3    Experimental Results    67
3.3.3.1    CMOS-MEMS Fabrication and Results    67
3.3.3.2    Pull-in & Beam Profile Measurement    71
3.3.3.3    Measured Spectra for Deep Sub-micron Gaps    72
3.3.3.4    Integrated CMOS-MEMS Circuits    76
3.4    QUASI-LINEAR FREQUENCY TUNING FOR CMOS-MEMS 
       RESONATORS    78
3.4.1    Frequency Tuning Mechanism    80
3.4.2    Frequency Tuning Model and Simulation    81
3.4.3    Active Frequency Tuning Results    86
3.5    CONCLUSIONS    89

CHAPTER 4    HIGH Q CMOS-MEMS RESONATORS    91
4.1    INTRODUCTION    91
4.2    SQUARE-PLATE COMPOSITE SIO2/POLYSI FLEXURAL MODE RESONATOR    94
4.2.1    SiO2/PolySi Resonator Design    96
4.2.2    Experimental Results    100
4.3    CMOS-MEMS DETF OXIDE RESONATORS BASED ON 0.18M 
       PROCESS    107
4.3.1    Flexural-Mode DETF Oxide Resonators    108
4.3.2    Experimental Results    112
4.4    CMOS-MEMS BULK-MODE OXIDE RESONATORS BASED ON 
       0.18um PROCESS    119
4.4.1    Bulk-Mode Square-Plate Oxide Resonators    119
4.4.2    Experimental Results    125
4.4.2.1    CMOS-MEMS Fabrication and Results    125
4.4.2.2    Measurement Results    129
4.5    CONCLUSIONS    137

CHAPTER 5    PASSIVE TEMPERATURE COMPENSATION FOR CMOS-MEMS 
             RESONATORS    139
5.1    INTRODUCTION    139
5.2    PASSIVE TEMPERATURE COMPENSATION FOR METAL-RICH COMPOSITE BEAM RESONATORS    142
5.2.1    Compensation Modeling for Composite Beam    142
5.2.2    Measurement Results    145
5.3    THEORETICAL MODEL OF 1-D PASSIVE TEMPERATURE 
       COMPENSATION FOR OXIDE-RICH CMOS-MEMS COMPOSITE LAMÉ-
       MODE RESONATORS    147
5.4    THEORETICAL AND SIMULATED MODEL OF 3-D PASSIVE 
       TEMPERATURE COMPENSATION FOR OXIDE-RICH CMOS-MEMS 
       COMPOSITE LAMÉ-MODE RESONATORS    150
5.4.1    Structural Geometric Model Simplification    150
5.4.2    TCf  Theoretical Analysis for Square-Plate with 
         Multi-Layers    155
5.4.3    TCf Theoretical Analysis using Perturbation 
         Theory    156
5.4.4    TCf Simulated Analysis using Superposition 
         Method    159
5.4.5    TCf Simulated Analysis using Full Structural 
         Model    167
5.5    CONCLUSIONS    176

CHAPTER 6    CONCLUSIONS AND FUTURE WORK    177
6.1    CONCLUSIONS    177
6.2    FUTURE WORK    180
6.2.1    High-Q CMOS-MEMS oxide-rich composite resonators 
         with Low Rm and Low TCf    180
6.2.2    Very High Frequency (VHF) CMOS-MEMS Length-
         Extension Mode Resonators with Internal Dielectric 
         Transduction (IDT)    183
6.2.3    Ultra High Frequency (UHF) CMOS-MEMS Bulk Acoustic 
         Resonators (BARs) with Internal Dielectric 
         Transduction (IDT) – research studied at MIT  188

BIBLIOGRAPHY    196
PUBLICATIONS    203
PRIZE AWARDED    207


                                

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