研究生: |
林怡婷 |
---|---|
論文名稱: |
Mo/CIAS介面的優化與Cu(In,Al)Se2太陽電池製程之研究 Optimization of Mo/CIAS interface for fabricating Cu(In,Al)Se2 solar cell |
指導教授: |
曾孝明
黃惠良 |
口試委員: |
翁恆義
孫澄源 |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering |
論文出版年: | 2014 |
畢業學年度: | 102 |
語文別: | 英文 |
論文頁數: | 74 |
中文關鍵詞: | 銅銦鋁硒太陽能電池 、硒化製程 、濺鍍製作 |
相關次數: | 點閱:2 下載:0 |
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本研究主要延續學長姐的實驗,利用DC sputter沉積Cu-In-Al 合金靶前驅物,其合金比例為Cu:In:Al=0.9:0.85:0.15,探討在固定比例的合金靶材下提高band-gap的研究;而Mo與CIAS 間的介面問題需要透過硒化的時間、溫度與硒粉的重量解決;透過製程條件獲得覆蓋性佳與透光性佳的CdS薄膜。本研究發現,在硒化前加入約50nm的Al可以提高太陽電池的開路電壓;並加入 i - ZnO 在 CdS 和 Al:ZnO 之間改善開路電壓以及並聯電阻,最後使用 E- Gun 沈積鋁 (Al) 作為前電極增並增加電子收集的能力。
45mg的硒粉、溫度530℃、硒化時間20分可以得到最佳的太陽電池,其開路電壓(Voc)為0.49、短路電流(Jsc)為17.97、填充因子(FF)為0.24,效率為2.11%。
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