本研究藉由合成無毒、對環境友善之錫錳鎳多元氧化物靶材，並利用電子束蒸鍍及射頻磁控濺度系統成長新穎錫錳鎳多元氧化物薄膜，且經由後續光性及電性等分析及趨勢探討，尋找可用於光電半導體元件之材料。最後，嘗試驗證薄膜作為太陽能吸收層之可行性。
　　本研究主要利用兩種方法成長新穎 Sn-Mn-Ni 多元氧化物薄膜。第一種為以電子束蒸鍍成長薄膜，且藉由田口法實驗設計中調整生胚的成份比例、薄膜退火溫度及薄膜退火環境三種變因並搭配 X 光能量散佈儀、紫外/可見光吸收光光譜儀、霍爾效應量測儀等鑑定薄膜特性來找出影響薄膜吸光率、載子濃度及電阻率的變因趨勢。
　　而後選擇於可見光波段吸收率最高之薄膜依照其薄膜元素成份比例製成靶材，並利用第二種薄膜成長方法，射頻磁控濺度系統成長薄膜。藉由調變濺鍍氧分壓、濺鍍基板溫度及後續不同薄膜退火溫度及環境且再次搭配以上儀器來找出影響薄膜吸光率、載子濃度及電阻率的變因趨勢。最後得到的結論為薄膜載子濃度將隨著提升濺鍍氧分壓而增加，但又隨著基板溫度提升至高溫而降低；電阻率則是隨著提升基板溫度而上升。而退火溫度及環境的改變與薄膜載子濃度及電阻率並無明顯直接關係，但薄膜只要在退火後，其透光度皆較退火前高。
　　因此，本研究選擇以濺鍍成長後吸光率最高 (Absorption % ~ 85 %) 之 n-type 薄膜，搭配同樣是以濺鍍成長之 p-type 薄膜組成同質 p-n 接面太陽能電池，並以此元件初步驗證 Sn-Mn-Ni 多元氧化物薄膜作為光電元件之可行性。

In this work, novel, stable and environmentally friendly Sn-Mn-Ni based oxide targets were prepared and their thin films were deposited by e-beam evaporation and RF sputtering. After that, feasibilities for optoelectronic applications were discussed.
E-beam evaporation was used to deposit thin films in the beginning. Taguchi method was an experiment design tried to find out three factors, portion of element in green compact, post annealing temperature and post annealing environment, which was the most effective factor to dominate the electro-optical characteristics of thin film. The absorption coefficient, carrier concentration, resistivity and crystal structure of thin films were confirmed by UV-Vis, Hall effect measurement and X-ray diffractometer (XRD). After that, the relationships between compositions and properties were discussed.
The composition of thin film deposited by e-beam evaporation with highest light absorption in visible region was selected to prepare the target. Partial pressure of oxygen and substrate temperature in sputtering process, post annealing temperature and post annealing environment were four factors chosen to investigate the trends of absorption, carrier concentration and resistivity of thin film. The results showed carrier concentration had positive correlation with the partial pressure of oxygen in deposition and thin films become more transparent after annealing.
After that, p-n homo-junction Sn-Mn-Ni oxide solar cells were fabricated. The results revealed a suspected p-n junction which preliminary provided the feasibility of photovoltaic applications of Sn-Mn-Ni based oxide thin film in this study.

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