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研究生： 麥迪納
Henry Medina Silva
論文名稱： Direct Deposition of Graphene on Oxides and Controllable Doping for Device Applications
直接成長石墨烯於氧化物表面與可調式摻雜於電子元件之應用
指導教授： 邱博文
Chiu, Po-Wen
口試委員: 陳啟東
林敏聰
鄭舜仁
李奎毅
學位類別： 博士
Doctor
系所名稱： 電機資訊學院 - 電子工程研究所
Institute of Electronics Engineering
論文出版年： 2012
畢業學年度： 100
語文別： 英文
論文頁數： 119
中文關鍵詞： 石墨烯 、CVD
外文關鍵詞： Graphene, Chemical Vapor Deposition
相關次數： 點閱：2  下載：0 
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    • 在銅箔表面或碳化矽表面，大面積地成長石墨烯，是現今發展石墨烯電子元件應用的重大突破；然而，在碳化矽表面成長石墨烯，雖然可以成長高品質的石墨烯，但需要相當高的成長溫度，基於成本與整合的問題，造成其於工業應用上的缺點。因此，發展在氧化物表面直接成長石墨烯的技術，無需濕式蝕刻轉移的步驟，提昇元件的應用廣泛度，即是目前科學研究的重要課題。本論文探討利用電子迴旋共振化學氣相沈積法，直接成長石墨烯於氧化物表面，探討其成長機制，與提昇其導電特性，並將其應用於電子元件與透明導電薄膜的應用。

    Growing of graphene has rapidly developed giving large and important steps as large area monolayer graphene grown on Copper or high quality epitaxial graphene grown on Silicon-Carbide. However, there are still diculties to overcome as the high thermal budget used and the possibility of growing on insulating substrates to avoid transfer methods. In addition, growing mechanisms of graphene on di erent substrates are not completely elucidated yet. For that reason, this work focusses on the understanding of graphene growing mechanism; and then, on improving growing conditions to manipulate and modify graphene electrical properties.

    1. Graphene Properties 1.1 Allotropes of Carbon 1.2 Band Structure of Graphene 1.3 Electrical Properties 1.4 Optical Properties 2 Raman Spectra of Graphene 2.1 Raman Scattering and Raman Spectroscopy 2.2 Origin of the Raman Bands in Graphene 2.3 Defect calculations 2.3.1 Crystalline size in defective graphene 2.3.2 G Band Linewidth 2.4 Graphene Doping 2.4.1 Breakdown of the Adiabatic Born Oppenheimer Approximation 2.4.2 2D Band shift 3 Graphene Growth by Chemical Vapour Deposition 3.1 Epitaxial Graphene by Carbon Segregation on Ni 3.2 Epitaxial Graphene Grown by CVD on Cu 3.2.1 Experimental Setup 3.2.2 Temperature E fect 3.2.3 Flow ratio and partial pressure 3.2.4 Growth time 3.2.5 Electrical conductivity 4 In situ Doping of Graphene 4.1 Experimental Details 4.2 Monolayer Identi cation 4.3 XPS Spectra 4.4 Raman Spectra 4.5 Growing Mechanism 5 Post-Doping of Graphene 5.1 Experimental Details 5.2 Raman Spectra 5.3 XPS Spectra 5.4 Transport 5.5 Doping Mechanism 6 ECR Chemical Vapor Deposition of Graphene 6.1 Electron Cyclotron Resonance CVD Setup 6.2 Experimental Details 6.3 Transmition Electron Microscope (TEM) and Scanning Electron Microscope (SEM) Measurements 6.4 Growing Mechanism 6.5 Raman Spectra 6.6 Raman Spectra 6.7 Growing on Di erent Substrates 6.8 Electrical Measurement 6.9 Transmittance and Sheet Resistance 6.9.1 Sheet Resistance 6.10 Post-treatment 6.10.1 Hydrocarbon Annealing 6.10.2 Chemical Doping 7 Summary and Outlook

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