本論文針對奈米級半導體材料在微腔體內之發光性質研究。研究動機除了腔體高Q值的興趣外，更利用半導體奈米材料的特殊發光性，結合腔體成為光學應用。所利用奈米粒子為可發光的螢光粒子—CdSe（5.6 nm）作為發光光源。此CdSe外包裹ZnS作為保護層，再加以利用硫醇分子（MPTS），利用Zn-S的化學鍵結，成功結合CdSe粒子與腔體球，成為共振腔體。腔體球的部分，選用了大小兩種腔體，大腔體為玻璃球（3~10 micrometer），小腔體為silica球（0.4 micrometer）並且在大腔體球內成功觀測到腔體模組的現象（cavity mode）。光性分析的部分，主要利用Argon雷射為主要的激發光，激發螢光粒子使得光源在玻璃球上共振，並架設微區域光致激發螢光光譜（Micro- Photoluminescence）裝置，量測單一腔體結構的光性。
本文的重點在於觀測球形的腔體模，也稱為回音壁波（Whispering Gallery mode, WGM），利用散射平面波的Mie theory作為理論背景，並成功觀測到下列現象：WGM模組態(發光在∼620 nm)、WGM模的spacing(37 meV)、Quality factor(Q ~ 500 )、Purcell Factor(F ~9.1)、不同偏振方向（TE/TM）分析、類似自發輻射的現象(threshold voltage ~ 320 kW/cm2)、低溫CdSe的光譜等等。將奈米螢光粒子結合腔體球，觀測球形的共振模，為本文的重點。並期許未來此種高Q值的雷射腔體，能作為光學上應用元件。

This thesis studied the photoluminescent properties of semiconductor nanomaterials in photonic microcavities. Glass spheres (3~ 10 micrometer) covered CdSe nano-dots (5.6 nm) are applied to microcavities. The emission (~620 nm, visible light spectrum) of the single microcavity is measured by Micro-PL system. Cavity mode, called Whispering Gallery Mode (WGM), is observed by us and explained by Mie theory. Observed phenomenon: Cavity enhancement (20 times), spacing between WGM (37 meV), small mode volume (1.3 × 10-12 cm3), spectrums of different polarizations (TE / TM), stimulated emission (320 kW/cm2), low temperature CdSe spectrum etc.

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