本研究為製作高能量解析度的N通道接面型場效電晶體矽漂移偵測器(N-JFET SDD)，用於能量散佈能譜儀系統中偵測材料的特徵X光得到選定區材料所含元素的定性、半定量、面掃描及線掃描資訊。，
N-JFET矽漂移偵測器將FET整合至晶片使信號傳遞路徑減短，且讓初級FET能夠和晶片一同冷卻，減少晶片和FET的熱雜訊影響。藉由保護環設計減少元件內部漏電流，且利用超淺佈植結構以提高低能量X射線能量解析度和元件量子效率。並將窗口端面積增大，使得無感層變薄，可偵測更低能量，提升偵測極限。
訊號量測方面在元件未完成前使用實驗室自製矽p-i-n偵檢器量測241Am(5.468 MeV)時有特徵峰值出現，以空氣當介質配合不同距離觀察α粒子能量衰減情況，並計算阻滯能力驗證其為α粒子，而量測55Fe(5.898 keV)能譜圖發現雜訊過高導致無明顯特徵峰出現。推測主要原因有二，首先55Fe射源和241Am相比每顆粒子能量差了920倍，導致55Fe(5.898 keV)訊號被雜訊所淹蓋，再來偵測器表面由於未真空封裝造成表面汙染，使得在施加偏壓的情況無法因為空乏區的擴展造成雜訊下降，反而隨偏壓上升表面漏電流大幅上升，造成雜訊掩蓋訊號。若是偵測器能夠經由良好的真空封裝排除汙染問題，即有可能看見55Fe(5.898 keV)的能譜圖。

This research is aim to fabricate high energy resolution N-JFET silicon drift detector used in energy dispersive x-ray spectrometer to detect characteristic X-ray of material for composition information of selected region of material. N-JFET silicon drift detector integrates FET into detector chip, which makes shorter path of signal, and decrease thermal noise for cooling with chip simultaneously. Inner leakage current can be decreased with guard ring and enhance energy resolution and quantum efficiency of low energy X-ray with shallow implanted structure; in addition, larger window area leads to thinner dead layer, which can detect lower energy to improve performance of detector.
We have detected characteristic peak of 241Am(5.468 MeV), and verified α particle by calculating stopping power of α particle with different distance in air. However, we have not detected characteristic peak of 55Fe(5.898 keV) because of overhigh noise. There are two possible reason for above result; first, the signal of 55Fe(5.898 keV) is 920 times smaller than 241Am(5.468 MeV). Second, polluted surface of detector causes increase of leakage current with higher bias. Those reasons could make 55Fe(5.898 keV) covered under noise. If contamination problem can be solved with vacuum package, detecting characteristic peak of 55Fe(5.898 keV) is possible.

1 汪建民, 材料分析 Materials analysis,中國材料學會, 1998

2 陳力俊, 材料電子顯微鏡學, 行政院國家科學委員會精密儀器發展中心發行, 1994.

3 https://amptek.com/pdf/characteristic_xrays.pdf

4 Glenn F. Knoll , Radiation Detection and Measurement , WILEY, 1999

5 https://en.wikipedia.org/wiki/Bremsstrahlung

6 V. Radeka, P. Rahek, S. Rescia, E. Gatti, A. Longoni, M. Sampietro, et al., "Implanted silicon JFET on completely depleted high-resistivity devices," Electron Device Letters, IEEE, vol. 10, pp. 91-94, 1989.

7 P. Lechner, S. Eckbauer, R. Hartmann, S. Krisch, D. Hauff, R. Richter, et al., "Silicon drift detectors for high resolution room temperature X-ray spectroscopy," Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 377, pp. 346-351, 1996.

8 P. Lechner, W. Buttler, C. Fiorini, R. Hartmann, J. Kemmer, N. Krause, et al., "Multichannel silicon drift detectors for X-ray spectroscopy," in Astronomical Telescopes and Instrumentation, 2000, pp. 592-599.

9 P. Lechner, A. Pahlke, and H. Soltau, "Novel high-resolution silicon drift detectors," X-Ray Spectrometry, vol. 33, pp. 256-261, 2004.

10 A. Longoni, C. Fiorini, C. Guazzoni, S. Buzzetti, M. Bellini, L. Strüder, et al., "A novel high‐resolution XRF spectrometer for elemental mapping based on a monolithic array of silicon drift detectors and on a polycapillary x‐ray lens," X‐Ray Spectrometry, vol. 34, pp. 439-445, 2005.

11 R. Alberti, C. Fiorini, C. Guazzoni, T. Klatka, and A. Longoni, “Elemental mapping by means of an ultra-fast XRF spectrometer based on a novel high-performance monolithic array of Silicon Drift Detectors,” vol. 580, pp. 1004–1007, 2007.

12 Gabriella A. Carini, Wei Chen, Gianluigi De Geronimo, Jessica A. Gaskin, Jeffrey W. Keister, Zheng Li, Brian D. Ramsey, Pavel Rehak, and David P. Siddons, “Performance of a Thin-Window Silicon Drift Detector X-Ray Fluorescence Spectrometer” Nuclear Science, IEEE Transactions on,, vol. 7441, no. 5, pp. 744118-744118-12, 2009

13 D. M. Schlosser, P. Lechner, G. Lutz, a. Niculae, H. Soltau, L. Strüder, R. Eckhardt, K. Hermenau, G. Schaller, F. Schopper, O. Jaritschin, a. Liebel, a. Simsek, C. Fiorini, and a. Longoni, “Expanding the detection efficiency of silicon drift detectors,” Nucl. Instruments Methods Phys. Res. Sect. A Accel. Spectrometers, Detect. Assoc. Equip., vol. 624, no. 2, pp. 270–276, 2010.

14 G. Zampa, R. Campana, M. Feroci, A. Vacchi, V. Bonvicini, E. Del Monte, Y. Evangelista, F. Fuschino, C. Labanti, M. Marisaldi, F. Muleri, L. Pacciani, M. Rapisarda, A. Rashevsky, A. Rubini, P. Soffitta, N. Zampa, G. Baldazzi, E. Costa, I. Donnarumma, M. Grassi, F. Lazzarotto, P. Malcovati, M. Mastropietro, E. Morelli, and L. Picolli, “Room-temperature spectroscopic performance of a very-large area silicon drift detector,” Nucl. Instruments Methods Phys. Res. Sect. A Accel. Spectrometers, Detect. Assoc. Equip., vol. 633, no. 1, pp. 15–21, 2011.

15 D. E. Newbury and N. W. M. Ritchie, “Elemental mapping of microstructures by scanning electron microscopy-energy dispersive X-ray spectrometry (SEM-EDS): extraordinary advances with the silicon drift detector (SDD),” J. Anal. At. Spectrom., vol. 28, no. 7, pp. 973–988, 2013

16　安毓英、曾小東, 光學感測與測量, 五南圖書出版股份有限公司, 2004

17　http://amptek.com/xrf/

18 A. Niculae et al., “Optimized readout methods of silicon drift detectors for high-resolution X-ray spectroscopy,” Nucl. Instruments Methods Phys. Res. Sect. A Accel. Spectrometers, Detect. Assoc. Equip., vol. 568, no. 1, pp. 336–342, 2006.

19　施敏, 半導體元件物理, 國立交通大學出版社, 2002

20　許喬俊, "Fabrication and Study of High Resolution Silicon Drift Detector." , 國立清華大學碩士論文 (2014)

21 Peter Van Zant, 半導體製程, 美商麥格羅‧希爾國際股份有限公司 台灣分公司, 2001

22 張敬燕, 半導體製程設備, 五南圖書出版股份有限公司, 2001

23　 鍾堅, 輻射度量學概論, 五南圖書出版股份公司,2006