隨著地球能源日益枯竭，再生能源被視為一項重要的課題，現今太陽能發電為再生能源中相當重要的研究領域，其中又以銅銦鎵硒硫(CIGSSe)太陽能電池為具有發展潛力的太陽能電池種類，因為它具有直接能隙，可製作於可撓式基板上的好處。但傳統銅銦鎵硒硫太陽能電池使用硫化鎘(CdS)做為緩衝層材料，其高毒性易嚴重汙染環境。因此，本論文著重在使用原子層沉積法製備無毒硫氧化鋅(Zn(O,S))緩衝層以取代傳統硫化鎘(CdS)緩衝層。本論文分為以下四部分。首先，我們會用表面硫化解釋為什麼製程參數所設定的硫氧比不等於實際的硫氧比，並提出一個修改過後的製程參數，以減緩此效應。第二部分為探討不同試片表面對緩衝層最佳厚度以及表面處理對緩衝層的影響，並藉由蝕刻水浴法製備的緩衝層後，使用原子層沉積法製備緩衝層，在不需要抗反射層的情形下，達到17.01%的高效率。第三部分將探討製程溫度對緩衝層成分的影響。而第四部份將探討高應變點玻璃基板和鈉玻璃基板所製成的銅銦鎵硒硫太陽能電池的不同，並藉由鈉玻璃基板元件，做到只靠原子層沉積法，達到16.40%的高效率太陽能元件。

With gradually decreased energy resource on earth, renewable energy is considered to be an important subject. Nowadays solar cell is an important research category in renewable energy. Among them, CIGSSe is considered to have a great potential because it has direct band gap and can be made on flexible substrate. However, traditional CIGSSe solar cell uses CdS as buffer layer. Its high toxicity is harmful for environmental protection. As a result, in this thesis, we focus on using atomic layer deposition to make non-toxic Zn(O,S) buffer for substituting CdS buffer. There are four main parts in this thesis. First, we will explain that why the process parameters we set is not equal to real element composition by surface sulfurization and propose modified parameters to reduce this kind of effect. Second, we will discuss the difference of optimal buffer thickness on different sample surface and how the surface treatment affects buffer. By using etched CBD Zn(O,S) and deposit ALD Zn(O,S) buffer on it, we can reach lab record efficiency(17.01%) without using anti-reflection layer. Third, we will discuss how the process temperature affects the composition in buffer. And for the fourth part, we will discuss the difference of CIGSSe made on HSPG and SLG. By using CIGSSe on SLG substrate, we can reach 16.40% high efficiency without any treatment on CIGSSe surface.

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