單層過度金屬硫族化合物因其多元的電子結構與光學特性在次世代的電子元件應用以及基礎科學研究中具有無窮的潛力。隨著凡德瓦異質結構概念的提出，不同特性的二維材料能夠輕易地互相結合並產生更多元的材料特性以用於拓展材料的應用範疇。本論文藉由掃描探針顯微術研究化學氣相沉積法所合成之二維材料以及其異質結構的表面特徵與電子結構。
基於良好的材料轉移技術，透過去離子水作為材料轉移的媒介將合成後的單層二維材料轉移至特定基板上，且得到乾淨以及良好介面的試片以用於超高真空的掃描探針顯微鏡中進行研究。我們成功的搭起材料生長與超高真空分析系統的連結以用於更多基礎科學的研究。
再者，不同的材料堆疊結構也成功地透過掃描探針顯微術成功的被解析出來，這些不同的材料堆疊結構透過不同的電子結構耦合情形能夠創造出各式各樣的物理特性，像是超導現象、電子自旋谷耦合能態、層間量子化激子等物理現象都與材料堆疊的耦合情形具有高度關聯性。掃描電子顯微術具有同時解析材料表面結構以及其對應電子結構的能力，像是應變、點缺陷、以及異質介面能帶偏移的特性。藉由理論的推導，不同的材料堆疊結構所對應的堆疊情形能夠清楚地被解析出來。材料堆疊所形成的耦合的電子結構也能藉由掃圖過程中參數的調控形成不同的影像對比可用來了解材料間的電子結構交互作用情形。
最後，藉由探測側向二維異質結構的材料介面，我們成功的解析了其晶體結構以及電子結構，也首度證實了二硫化鉬二硫化鎢側向異質接面為無應變的理想材料介面以及第二型的能帶偏移特徵。

Monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) have demonstrate great potential for future applications and fundamental physics studies because of wide variety of its electronic and optical properties. With the emergence of van der Waals (vdW) heterostructures, the applications of 2D materials has been extended by the combination of different kinds monolayers without the consideration of lattice mismatch or process feasibility. This dissertation focuses on the electronic properties of the transferred as-grown monolayer TMDs and its heterostructures by scanning tunneling microscopy and spectroscopy (STM/STS).
We begin with the study of clean transferring techniques of the as-grown monolayer synthesized by chemical vapor deposition (CVD) process. We find that the water is an ideal media for clean transferring process of CVD-grown sample. With this technique, the as-grown 2D lattices are successfully integrated into the ultra-high vacuum system for STM/STS study.
Then, multiple Moiré of different kinds of stacking configurations are observed and characterized by STM imaging. The modulated periodic potential of Moiré patterns is due to the twisting between stacked layers which offers an extra degree of freedom to tailor materials property. Such as unconventional superconductivity, coupled spin-valley states and quantized interlayer excitons are highly related to the electronic couplings between stacked monolayers. The STM/STS has the ability to provide the direct evidence of the Moiré superlattice and correlate coupled parameters among local electronic structures, strains, defects and band alignment at atomic scale. Diverse stacking configurations of the TMDs heterostructures are demonstrated with our theoretical predictions. The tunable coupled electronic structures of stacked monolayers are also presented to demonstrate the electronic structure difference under different imaging conditions.
Finally, we probe the geometric and electronic structures at the vicinity of lateral stitched MoS2-WS2 heterostructures. By the identification of its lattice structures and spatially resolved electronic structures at both sides of the boundary, a strain free signature of lateral stitched boundary is evidenced. Drawing from all the research presented, we arrive at a favorable conclusion about the viability of STM/STS study on transferred 2D lattices.

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