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研究生： 潘柏亨
Pan, Bo-Heng
論文名稱： 室溫濺鍍具垂直磁異向性TMn/CoPt薄膜交換偏壓之研究 (T = Ir及Fe)
Exchange bias of perpendicular magnetic anisotropic TMn/CoPt thin films sputtered at room temperature (T = Ir and Fe)
指導教授： 戴明鳳
Tai, Ming-Fong
口試委員: 張晃暐
Chang, Huang-Wei
林昭吟
Lin, Jauyn-Grace
學位類別： 碩士
Master
系所名稱： 理學院 - 物理學系
Department of Physics
論文出版年： 2019
畢業學年度： 107
語文別： 中文
論文頁數： 121
中文關鍵詞： 交換偏壓 、垂直磁異向性 、室溫濺鍍
外文關鍵詞： Exchange bias, Perpendicular magnetic anisotropic, room temperature sputtering
相關次數： 點閱：2  下載：0 
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    • 本研究以具垂直磁異向性之無序六方晶CoPt薄膜作為鐵磁層，與IrMn及FeMn等反鐵磁層結合成交換偏壓系統，研究其磁性。室溫濺鍍之IrMn/CoPt系統及FeMn/CoPt系統皆具垂直之交換偏壓(HE)，分別為273 Oe及408 Oe。並於濺鍍過程中施加垂直膜面1 kOe外加磁場，排列其系統之磁矩，有效提升系統之HE至348 Oe及455 Oe。此外，亦研究了CoPt厚度及AF厚度效應對AF/CoPt系統(AF=IrMn及FeMn)之磁性。本研究之IrMn/CoPt及FeMn/CoPt系統皆符合交換偏壓效應之理想化界面模型，HE與tFM呈反比。當AF之厚度過薄時，AF之反鐵磁層之自旋對鐵磁層之自旋的釘扎效應減弱，使HE下降。IrMn/CoPt及FeMn/CoPt系統所具最大之HE分別為717 Oe及800 Oe，而界面偶合能0.11 erg/cm2及0.26 erg/cm2。欲了解外加磁場之效應，亦探討了場退火效應對無磁場下製備及1 kOe外加磁場下製備之FeMn/CoPt系統之影響。無外加磁場下製備之FeMn/CoPt系統的HE由408 Oe提升至463 Oe，此與1 kOe外加磁場下製備FeMn/CoPt系統的455 Oe相近。此說明了濺鍍過程施加外加磁場與場退火有相同的效應。最後，以IrMn/CoPt系統為基礎，於室溫製備出垂直之自旋閥元件，獲得典型自旋閥之磁性行為，其釘扎層之交換偏壓(HE) 為570 Oe及矯頑磁力(Hcp)為102 Oe，自由層之矯頑磁力(Hcf¬)為514 Oe，其磁阻值為3.3%。

    In this work, magnetic properties of perpendicular AF/CoPt system where disorder hexagonal CoPt with perpendicular magnetic anisotropy (PMA) is adopted as a ferromagnetic layer and IrMn and FeMn as AF layer s are studied. IrMn/CoPt and FeMn/CoPt systems prepared at room temperature by sputtering exhibit good PMA with larger exchange bias (HE) of 273 Oe and 408 Oe, respectively. Applying magnetic field of 1 kOe, induced by NdFeB magnet, perpendicular to substrate during films deposition could align spins of CoPt layer and therefore AF layer, increasing HE to 348 Oe for IrMn/CoPt and 455 Oe for FeMn/CoPt, respectively. The thickness dependences of CoPt and AF layers are also studied. The inverse proportional relationship between HE and tCoPt well agrees with ideal interface model of exchange bias system. When AF thicknesss is decreased, the decreased pinning effect between AF and CoPt due to lower anisotropy energy of AF reduces HE. The optimized HE of 787 Oe and 800 Oe with large exchange coupling energy of 0.11 erg/cm2 and 0.26 erg/cm2 are obtained for IrMn/CoPt and FeMn/CoPt systems, respectively. To explore effect of applying magnetic field of 1 kOe during flms deposition, field annealing is adopted. HE of FeMn/CoPt prepared without magnetic field is increased from 408 Oe to 463 Oe with increasing of annealing temperature during magnetic field of 1 kOe. It almost equals to FeMn/CoPt sputtered at the magnetic field of 1 kOe. Finally, IrMn/CoPt-based perpendicular spin valve prepared at room temperature exhibits HE of 570 Oe, coercivites of pinned-layer and free-layer of 102 and 514 Oe, and GMR ratio of 3.3%. The result of this study suggests AF/CoPt system has potential for applications in perpendicular spintroinic devices.

    摘要 I Abstract II 致謝 III 目錄 IV 圖目錄 VIII 表目錄 XIII 第一章 緒論 1 1.1 前言 1 1.2 磁紀錄媒體 3 1.3 自旋電子學 6 1.3.1 磁阻效應 7 1.3.2 異向性磁阻 8 1.3.3 巨磁阻 8 1.3.4 穿隧磁阻 9 1.4 CoPt二元合金 11 1.4.1 A1-CoPt無序結構 12 1.4.2 L10-CoPt有序結構 12 1.4.3 L11-CoPt有序結構(亞穩態) 12 1.4.4 L12-CoPt3有序結構 12 1.4.5 A3-CoPt無序結構 12 1.4.6 Bh-Co3Pt有序結構(亞穩態) 13 1.4.5 D019-Co3Pt有序結構(亞穩態) 13 1.5交換偏壓之反鐵磁材料 15 1.5.1 Ni-Mn 15 1.5.2 Mn-Pt 15 1.5.3 Fe-Mn 16 1.5.4 Ir-Mn 16 1.5.5 Mn-N 16 1.6 文獻回顧 17 1.7 研究動機與目的 24 第二章 理論基礎 26 2.1 磁性來源 26 2.2 磁性物質分類 27 2.3 磁異向性 30 2.3.1 磁晶異向性 31 2.3.2 形狀異向性 33 2.3.3 應力異向性 33 2.3.5交換異向性[ 34 2.3.4誘導異向性 35 2.4交換偏壓理論模型 36 2.4.1理想化界面模型 37 2.4.2界面反鐵磁(AFM)之磁區壁模型 39 2.4.3 混亂場模型 40 2.4.4 自旋翻轉之垂直界面偶合模型 42 2.4.5 界面之未補償反鐵磁(AFM)自旋模型 43 2.4.6 磁區態模型 45 2.4.7 部分磁區壁模型 49 2.4.8 自旋玻璃模型 51 2.5 濺鍍原理 55 2.5.1 直流濺鍍法 56 2.5.2 射頻濺鍍法 57 2.5.3 磁控濺鍍法 58 2.6 薄膜沉積原理 60 第三章 實驗流程與方法 62 3.1 實驗流程 62 3.2 實驗製備及參數 63 3.2.1 實驗材料 63 3.2.2 基板清洗流程 63 3.2.3 濺鍍流程 64 3.3 量測分析 66 3.3.1 膜厚分析 66 3.3.2 晶體結構分析 67 3.3.3 表面形貌分析 68 3.3.4 磁性量測 69 第四章 結果與討論 71 4.1垂直磁異向性CoPt薄膜之製備與磁性之研究 72 4.1.1 CoxPt100-x磁性及結構之研究 72 4.1.2 底層厚度效應對Co50Pt50磁性及結構之研究 75 4.1.3 小結 78 4.2 IrMn/CoPt系統磁性之研究 79 4.2.1 於1 kOe外加磁場下製備IrMn/CoPt系統之磁性及結構變化 79 4.2.2 CoPt厚度效應對IrMn/CoPt系統磁性及結構之影響 82 4.2.3 IrMn厚度效應對IrMn/CoPt系統磁性及結構之影響。 89 4.2.4 小結 96 4.3 FeMn/CoPt系統磁性之研究 97 4.3.1於1 kOe外加磁場下製備FeMn/CoPt系統之磁性及結構變化 97 4.3.2 CoPt厚度效應對FeMn/CoPt系統磁性及結構之影響 99 4.3.3 FeMn厚度效應對FeMn/CoPt系統磁性及結構之影響 102 4.3.4 場退火效應對FeMn/CoPt系統磁性之影響。 107 4.3.5 小結 111 4.4 自旋閥系統磁性之研究 112 第五章 結論 114 參考文獻 116

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