摘 要
鉍酸鐵（BiFeO3）為目前熱門研究的複鐵式材料，但是很不幸地，BFO由於其在室溫下漏電流過大的問題，因此限制了其應用的價值，有許多文獻提供了很多BFO的製程方式，例如PLD、rf-magnetron sputtering、MOCVD和CSD等方式，本實驗採用CSD（chemical solution depoosition）的方式來旋鍍薄膜，實驗分為三個部份，第一部分為探討BFO薄膜的特性，由於鉍元素的熔點較低，在薄膜經過高溫熱處理的過程中，會因鉍揮發而造成損失，進而產生缺陷等問題，因此探討Bi/Fe=1.0、1.05和1.1三個成分，利用旋鍍法沉積於Pt/Ti/SiO2/Si（100）基板上，觀察氮氣氛下不同熱處理溫度的BFO薄膜的結構、電性質和磁性質方面的影響。而第二部份則是摻雜釔離子取代BFO中的鉍離子，在Bi1-XYXFeO3薄膜中分別取X=0.02、X=0.05和X=0.1三種不同摻雜量，觀察在氮氣氛下不同熱處理溫度的BYFO薄膜結構、電性質和磁性質方面的影響，還有與BFO薄膜相互比較相關的性質，藉以探討摻雜釔對BFO性質的影響。第三部份則是將BFO與BYFO性質較好的成分來探討氮氣氛下不同熱處理溫度與時間對薄膜性質的影響。
透過CSD的方式旋鍍沉積BFO與BYFO薄膜，在氮氣氛下500℃熱處理10min為最佳的性質，其最大的2Pr值可以到達100μC/cm2，而2Ec值也高達850kV/cm，而摻雜釔的量越多，也使BYFO薄膜的漏電流增大，因此摻雜釔的電滯曲線較BFO來得差，其最大的2Pr值約為80μC/cm2，而2Ec值約為650kV/cm，而BFO與BYFO的磁性質皆相差不多，飽和磁化量都約為3emu/cm3，因此摻雜釔並沒有使BFO有較好的磁性質，因此降低BFO的過大漏電流則成為往後實驗上重要的方向。

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