本論文提出以SOI晶片實現微機電共振式磁力計，運用SOI晶片的元件層和處理層結構配置以及晶片氧化層厚度所定義的感測間隙，搭配勞侖茲力原理，設計出能夠感測同平面磁場之微機電共振式磁力計。研究內容包含微機電共振式磁力計感測原理的理論介紹、公式推導，並結合理論計算與模擬驗證來達成符合地磁感測應用之磁力計元件設計。元件製程方面，透過SOI晶片製程之規劃發展出符合磁力計元件之製程，並以實際的製程實驗製作出磁力計元件。元件測試的部分，透過靜態量測分析元件的厚度、曲率半徑對於院件性能之影響，動態量測則包含元件頻率響應、操作頻率與操作環境之關係。最後透過實際的磁場量測實驗，測試元件操作於常壓以及真空環境下的建磁場感測性能，驗證本研究所開發之磁力計元件可行性。

This thesis presents a SOI-base MEMS resonant magnetometer. By way of theoretical analysis, simulation, process development and field measurement, a Lorentz force MEMS resonant magnetometer for geomagnetic field detection has been implemented. The presented MEMS resonant magnetometer has features of:(1) fabrication process is reduced by buried-oxide defined sensing gap, (2)improved sensitivity by reducing sensing gap thickness, (3)multi-axis detection magnetometer can be accomplished by means of structural design and electrical interconnection between device and handle layer, (4)MEMS inertial sensor compatible process for sensor integration. Furthermore, according to design concept of 1-axis magnetometer, a 3-axis magnetometer for compass application has been deigned.

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