首先研究不同的電漿處理對多孔性SiOCH超低介電常數薄膜之性質的影響。SiOCH超低介電常數薄膜對於僅有氨以及氫與氨兩步驟之電漿處理都在表面化學鍵結如Si-CH3和Si-H鍵結以及電性上都有不同程度的降低。薄膜的表面粗糙度在經過電漿處理之後變的比較平坦。與氨之電漿處理比較起來, 氫與氨兩步驟之電漿處理對SiOCH超低介電常數薄膜造成更多的結構變化以及電性的惡化。在經過氫與氨兩步驟之電漿處理之後與剛熱處理的薄膜比較起來, 崩潰電壓下降了22%。
接下來探討不同的電漿處理對於多孔性SiOCH超低介電常數與SiCN蝕刻停止層之間的介面鍵結結構與介面強度之影響。經由X射線光電子能譜分析, 在SiOCH與SiCN的介面有著約10 nm厚之複雜混合鍵結區域。經由電漿處理之後, 尤其是氫與氨兩步驟之電漿處理, 一層約30 nm之碳元素缺乏層包含較多之S-O相關的高鍵結能之鍵結形成於介面處。而SiOCH與SiCN之介面黏著強度由微米刮痕測試以及奈米刮痕測試量測得之。對於沒有經過電獎處理的介面, 黏著能經由奈米刮痕測試以及微米刮痕測試量測為0.22及0.44 J/m2。經由電漿處理之後, 尤其是氫與氨兩步驟之電漿處理, 介面黏著能提高到0.41及0.89 J/m2。主要是因為較多的Si-O高鍵結能之鍵結形成於介面處。
最後, 金薄膜暴露在氧電漿之中可以被氧化。氧化金有著很短的半衰期, 在22 ℃為22小時而在0 ℃為166小時。氧化金分解之活化能為57 KJ/mol表示了即使在低溫也非常的不穩定。從電阻值的結果也顯示了金表面經由氧電漿處理之後, 其電性不會降低因為氧化金會回復為元素金。

The effect of different plasma treatments on the properties of porous SiOCH ultra-low-dielectric-constant (ULK) film have been studied first. The SiOCH ULK films with NH3 only and H2/NH3 plasmas treatments resulted in various degrees of degradation of surface chemical bonds, Si-CH3 and Si-H and electrical properties. Surface roughness of the films with plasma treatments became smoothened. H2/NH3 plasmas treatment caused more SiOCH ULK film structural change and electrical deterioration compared with NH3 only plasma treatment. Moreover, after H2/NH3 two-step treatment, Ebd decreased by 22% as compared with the as-cured film.
Afterward, the effect of different plasma treatments on the interfacial bonding configurations and adhesion strengths between porous SiOCH ULK film and SiCN etch stop layer have been investigated. From X-ray photoelectron spectroscopic analyses, interlayer regions of about 10 nm thick with complicated mixing bonds were found at SiOCH/SiCN interfaces. With plasma treatments, especially H2/NH3 two-step plasma, a carbon-depletion region of about 30 nm thick with more Si-O related bonds of high binding energy formed at the interface. Furthermore, the adhesion strengths of the SiOCH/SiCN interfaces were measured by nanoscratch and microscratch tests. For the untreated interface, the adhesion energy was obtained as about 0.22 and 0.44 J/m2 by nanoscratch and microscratch tests, respectively. After plasma treatments, especially the H2/NH3 treatment, the interfacial adhesion energy was effectively improved to 0.41 and 0.89 J/m2 because more Si-O bonds of high binding energy formed at the interfaces.
Finally, by exposure to O2-plasma, gold films were oxidized. Gold oxide (Au2O3) has a short halflife of 22 h at 22 ℃ and 166 h at 0 ℃, with an activation energy of dissociation of 57 kJ/mol, indicating instability even at low temperatures. The results of electrical resistance also revealed that the electrical properties are not degraded after O2-plasma cleaning of the surface of gold due to the restoration of elemental gold.

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