本論文以濕式活化法(置換活化法及敏化活化法)活化TaN/SiO2/Si基材表面，並進行無電鍍銅沉積反應為主題，使用SEM、HREM研究無電鍍銅膜各階段孕核及成長的機制。實驗結果顯示置換處理的Pd 顆粒較敏化處理後的尺寸大，且較稀疏。置換處理的每個Pd顆粒約30-200 nm，而由約5 nm的奈米晶粒高角度堆疊而成；Pd/Cu界面為半契合界面，有差排的產生；Cu顆粒約30-200 nm，由約5 nm的奈米晶粒堆疊而成，晶粒與晶粒間為高角度晶界，且晶粒並無明顯的優選方向。敏化活化法的催化顆粒細密均勻，可供後續無電鍍銅成長的成核點數量多，易成長出連續而平整的銅膜。敏化活化的Sn-Pd催化顆粒為單一晶粒，大小約為5-10 nm。而一區域的多顆Sn-Pd催化顆粒，可共同成長出一顆大致相同方位的銅顆粒，內部由約1 nm的奈米晶以小角度排列；不同區域，方位不同。

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