氧化鋅由於具備獨特的光、電和壓電特性，且應用廣泛，是目前最受矚目的材料之一。氧化鋅為一寬能隙的半導體材料，其室溫下能隙約為3.3eV，所發光波段為紫外光波段；另外由於氧化鋅具有極大的激子束縛能(exciton binding energy)，大約為60 meV，遠大於室溫熱擾動能量(26 meV)，因此氧化鋅作為研究室溫操作雷射是一個相當具有吸引力的材料。
表面電漿雷射是一種可以突破傳統光學繞射極限的新型奈米半導體雷射，藉由激發金屬表面的自由電子集體振盪產生表面電漿子，使表面電漿子可以在金屬和介電質的界面形成奈米等級共振腔。
本研究以三區加熱的擴散爐成長出單晶的氧化鋅奈米線，將氧化鋅奈米線作為增益介質，並放置於隔著一層介電質的高品質金屬鋁膜上，形成「金屬-氧化物-半導體」結構，未來相當具有潛力和矽積體電路做結合，形成光積體電路。
本論文主要是探討氧化鋅奈米線電漿雷射在鋁金屬膜上的雷射特性，並改變氧化層的厚度，進而得到低雷射閥值的奈米雷射。

ZnO is one of the most promising optical materials and allows lasing in ZnO nanowires at room temperature. Plasmonic lasers are potentially useful in applications in biosensing, photonic circuits, and high-capacity signal processing. In this work, we combine a ZnO nanowire and single-crystalline metal films to fabricate Fabry-Perot type surface plasmon polariton (SPP) lasers to overcome the diffraction limit of conventional optics (λ/2n)3. High quality ZnO nanowires were synthesized by a vapor phase transport process via catalyzed growth. The ZnO nanowires were placed on a single-crystalline Al film grown with molecular beam epitaxy. Al2O3 deposited by atomic layer deposition was inserted between ZnO nanowires and Al film. The plasmonic laser is of metal-oxide-semiconductor (MOS) structure which might be compatible in processing of integrated silicon devices. The thickness effects of insulating layer on lasing threshold condition of the SPP nanolasers in the subwavelength regime were investigated. It was found that optimal thickness of dielectric layer deposited will lead to lower lasing threshold owing to the higher gain factor and lower metal loss.
Besides, we also discuss the optical properties of photonic lasers. ZnO nanowires are used as gain medium which are synthesized by hydrothermal method.

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