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| 研究生： |
謝秉恆 Hsieh, ping-heng |
|---|---|
| 論文名稱： |
CuInS2 延伸式閘極離子感測場效電晶體之研究 The Study on Ionic Sensitivity of CuInS2 Thin Film for Extended Gate Field Effect Transistor |
| 指導教授： |
陳建瑞
Chen, Jiann-Ruey |
| 口試委員: |
洪茂峰
陳伯宜 |
| 學位類別： |
碩士 Master |
| 系所名稱： |
工學院 - 材料科學工程學系 Materials Science and Engineering |
| 論文出版年： | 2011 |
| 畢業學年度： | 99 |
| 語文別： | 中文 |
| 論文頁數： | 96 |
| 中文關鍵詞： | 場效電晶體 、生物感測 、CuInS2 |
| 相關次數： | 點閱：2 下載：0 |
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自離子感測場效電晶體(ISFET)發明以來，在氧化物及氮化物感測膜上已有很廣泛的研究，此外，更進一步發展出延伸式閘極離子感測場效電晶體(EGFET)，此結構能防止水溶液侵入電晶體閘極(Gate)，並能更專注於感測薄膜的開發，也易於改變感測薄膜的形狀。而由於閘極為延伸式感測薄膜，故更需低阻抗、導電率高的薄膜。
本論文在ITO表面上使用水熱法鍍 CuInS2硫化膜，以不同溫度退火下的薄膜作為感測薄膜應用在延伸式閘極離子感測場效電晶體，針對 pH 值、銅離子、銀離子、鉛離子，測量其對離子感應的靈敏度。
本論文得知，500。C退火CuInS2薄膜，對各種離子靈敏度最佳，對氫離子可達56.2 mV/pH，對銅離子可達44.8 mV/pCu，對銀離子可達51.2 mV/pAg，對鉛離子可達39.7 mV/pPb，線性相關係數皆可達0.938以上。
本論文將使用兩種不同的EGFET作業方式，分別為 N-type MOSFET-EGFET Linear Mode以及N-type MOSFET-EGFET Saturation Mode，取得其對應的靈敏度，期望能得知感測薄膜帶在VG或VT改變的影響，並藉由量測I-V的特性來推斷 CuInS2 對離子的感測靈敏度，同時也將薄膜作物理性質分析，包括XRD分析、SEM分析、EDX分析、ESCA分析。
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