摘 要
本文研究主要探討矽晶太陽電池背部鈍化層(silicon base solar cell rear passivation layer)之探討。
利用超音波霧化鍍膜系統，將含有先驅物為乙醯丙酮鋁(Aluminium acetylacetonate)，溶劑為甲醇和水之溶液霧化再以攜帶氣體攜至已加熱之高品質拋光(100)矽晶圓基板上，因先驅物熱裂解反應而生成所需之氧化鋁膜，並以此氧化鋁薄膜做為太陽能電池鈍化層。
內容主要以沉積前基板有無經過浸泡硝酸預處理，以及針對試片加熱溫度以及後退火氣體、溫度處理對製程做參數改變，並找出以氧化鋁薄膜作為鈍化層之最佳條件。
以目前實驗結果比較，試片有無浸泡過硝酸預處理並沒有差異，兩著前處理試片皆在加熱基板溫度為400℃有最好的載子生命周期。利用此系統鍍膜，可達非真空環境大面積且快速鍍膜(沉積速率>2.5nm/min)之成效，但薄膜的均勻度仍需改善。

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