覆晶技術(Flip Chip Technology)或金線接合(Gold Wire Bonding)搭配球腳格狀陣列(Ball Grid Array)的連接方式已經廣泛地使用在現今的微電子封裝技術中。在覆晶技術中，凸塊底層金屬(Under-Bump Metallization)的材料選擇為最重要的議題之一。鎳基的凸塊底層金屬除了與銲錫的反應速率較低外亦作為阻擋銅金屬擴散的擴散阻絕層。本研究主要利用電子顯微鏡分析探討銲錫與鎳磷凸塊底層金屬間的相變化行為與相演進情形。
鎳基的凸塊底層金屬已廣泛地在微電子構裝產業裡使用。一般製作鎳基凸塊底層都是利用無電鍍(electroless plating)的方式在鍍製鎳基凸塊底層，由於無電鍍液裡需使用磷酸或亞磷酸，無電鍍鎳會伴隨著磷一起析鍍出。然無電鍍需要較長的鈍化處理及貴金屬鹽類的敏化處理，故擬嘗試以較有效率的電鍍方式來鍍製鎳磷凸塊底層金屬，探討其成為電子購裝產業裡凸塊底層金屬之可行性。實驗設計中改變不同的磷含量(7wt%, 10wt%, 13wt%)並與不同的市售錫膏探討其溼潤性質(wettability)。藉由掃瞄式電子顯微鏡及原子力顯微鏡來研究其表面形態及表面粗糙度對溼潤性的影響，並找出溼潤性與磷含量之關係。此外也將研究在電鍍過程中添加界面活性濟(surfactant)對電鍍鎳磷之表面形態、粗糙度及溼潤性的影響。
不同的磷含量對於錫銀銅無鉛銲錫與鎳磷凸塊底層金屬之介面反應有很大的影響。在一次迴銲後，(Cu,Ni)6Sn5先生成在銲錫與凸塊底層介面。經過三次迴銲之後，由於(Ni,Cu)3Sn4的生成，(Cu,Ni)6Sn5會脫離介面至銲錫裡。隨著迴銲次數的增加，Ni-Sn-P生成在10wt%與13wt%磷含量的凸塊底層接點，而在7wt%磷含量的凸塊底層則幾乎觀測不到Ni-Sn-P的生成，即使在十次迴銲後亦未發現Ni-Sn-P。考量凸塊底層之溼潤性、鍍覆速率、與銲錫之介面反應、凸塊底層之消粍速率及機械性質的研究，以提出並討論鎳磷凸塊底層金屬之最佳磷含量及適合的厚度。
由於Ni-Sn-P的生成對於銲接點之可靠度會有負面的影響，藉由穿透式電子顯微鏡的觀察發現一般認為的富磷層(P-rich layer)會隨著不同的磷含量有所變化。在7wt%磷含量會生成Ni3P的富磷層，而13wt%磷含量則是以Ni12P5之富磷相為主。此一差異對於Ni-Sn-P相的生成有著極大的影響，藉由控制鎳磷凸塊底層金屬之磷含量可以抑制此Ni-Sn-P相的生成於鎳磷凸塊底層金屬之銲接點上。此外，在多次的迴銲處理後，Ni-Sn-P底下之富磷相會有一系列的變化，而且不同的磷含量之凸塊底層金屬，其變化也不盡相同。搭配穿透式電子顯微鏡、電子微探儀及相圖，可詳細地探討在錫銀銅無鉛銲錫與鎳磷凸塊底層金屬之接點的富磷相之演進。
此外，亦進而即時觀察錫/銅銲點材料系統介面反應之相生成的行為。利用國家同步輻射研究中心之穿透式X光(in-situ X-ray with transmission mode in NSRRC)，得到一張介面反與之XRD圖只需要一分鐘。這是非常適合用來即時觀察介面反應生成之方法，而且即使是在迴銲過程中亦可以使用。除此之外，介金屬化合物(IMC)之熱膨脹係數(CTE)也可以藉由此方法得到。

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