研究生: |
劉士綸 Liu, Shih-Lun |
---|---|
論文名稱: |
Si(222)三光繞射相位決定與溫度變化之關係 Silicon(222)Three-Beam Diffraction Phase Decision and its Relationship with Temperature |
指導教授: |
張石麟
Chang, Shih-Lin |
口試委員: |
湯茂竹
Tang, Mau-Tsu 陳燦耀 Cheng, Tsan-Yao |
學位類別: |
碩士 Master |
系所名稱: |
理學院 - 先進光源科技學位學程 Degree Program of Science and Technology of Synchrotron Light Source |
論文出版年: | 2017 |
畢業學年度: | 106 |
語文別: | 中文 |
論文頁數: | 69 |
中文關鍵詞: | 三光繞射 、矽 、禁制反射 、繞射積分強度 、相位問題 、電子密度 |
外文關鍵詞: | Three-beam diffraction, Silicon, Si(222), forbidden reflection, phase problem, electron density |
相關次數: | 點閱:2 下載:0 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
現今的半導體元件中,矽晶圓已被廣泛的利用,並已有成熟的製程及磊晶技術。
本論文分為二部分,第一部份利用矽的中心對稱結構,探討Si(222)的禁制反射面的行為,藉由與Si(111)的積分繞射比值及三光繞射方法,算出此繞射面的結構因子的大小及相位。第二部分為探討Si(2 2 2)(1 3 -1)/(1 -1 3)三光繞射的溫變對結構因子大小及相位的影響,此實驗目的為Si(2 2 2)(1 3 -1)/(1 -1 3)時間解析實驗的前置實驗,欲釐清在時間解析實驗中觀察到的雷射激發電子雲造成的暫態相位變化是否有來自穩態熱效應造成積分強度改變造成的貢獻。
In semiconductor devices, Silicon wafer is a indispensable role,and already has a
mature process and epitaxial technology.
This study is divided into two parts, the first part of the use of silicon
centrosymmetric structure to study the behavior of Si (222) forbidden reflection
surface. By the integral diffraction ratio with Si (111) and three-beam diffraction
methods,we can calculate and obtain the structure factor real and imaginary parts of Si
(222). The second part is about the effect of temperature change on the real and
imaginary parts of structure factor of Si (2 2 2) (1 3 -1) / (1 -1 3) three-beam
iffraction.The purpose of this experiment is a pre-experiment of Si (2 2 2) (1 3 -1) /
(1 -1 3) time-resolved experiments, to clarify the phase change,which comes from the
temporary state of electon cloud induced by the pulsed laser or the steady state of
thermal effects caused by changes in the integral diffraction strength of the
contribution.
參考文獻
[1] W. H. BRAGG,Proc. Phys. SOC3. 3, 304 (1921).
[2] Anharmonicity and the Temperature Dependence of the Forbidden (222)
Reflection in Silicon)J. B. Roberto* and B. W. Batterman,1964
[3] Vibrational Amplitudes in Germanium and Silicon B.W. Batterman,1962
[4] X-ray Multiple-Wave Diffraction Theory and Application. S.L Chang - 4.1.1
[5] Absolute X-Ray Scattering Factors of Silicon and Germanium J. J. Demarco and R. J. Weiss. Physic Review,1965
[6] Direct Experimental Method for the Determination of X-ray Reflection Phases,Applied Physics,1981
[7] https://www.nist.gov/pml/nist-x-ray-form-factor-attenuation-and-scattering-tables-database-cont
[8]薄膜系統之X光三光共振繞射研究-吳雪鴻 博士論文,2005
[9] X光共振腔之24光動力繞射計算-邱茂森 博士論文,2008
[10] http://skuld.bmsc.washington.edu/scatter/AS_Friedel.html
[11] https://en.wikipedia.org/wiki/Friedel%27s_law
[12] Invariant-Phase Information of X-Ray Structure Factors in the Two-Beam Bragg Intensity near a Three-Beam PointHellmut J. Juretsehke,1982
[13] Diffraction studies of the (222) reflection in Ge and Si: A»armonicity and the bonding electrons. J. B. Roberto and B.W.Batterman ,Physical Review B,1974
[14] A Study of the (222) “Forbidden” Reflection in Germanium and Silicon, R. COLELLA and A. MERLINI, phys. stat. sol. 18, 157 (1966)
[15] 多共振腔系統、藍寶石X光共振腔及建置時間解析繞射系統-蔡一葦 博士論文,2014
[16] https://journals.aps.org/prb/abstract/10.1103/PhysRevB.60.284
[17]藍寶石X光共振腔之可行性研究-黃亮諭 碩士論文,2009