本篇論文係以研發在多晶鑽石表面和微米級鑽石顆粒上成長奈米級鑽石針尖結構的製備技術。兩個小時製程下，可以得到長度1 um的單晶奈米鑽石針尖狀結構。並且在多晶鑽石表面上所成長的奈米鑽石結構上，量測其對於散熱性質的影響，奈米鑽石結構在多晶鑽石表面上大幅增加了鑽石的表面積，對於散熱效果方面有部分的成效。在沒有在風扇時最為明顯，增加了7.3 %的散熱效果。不過當外加風速增加時，其所增加的散熱效果就不盡理想，風速越大奈米鑽石針尖狀效果越不明顯。推測原因在於增加風速時，在奈米級針尖狀結構中的通道其直徑也為奈米級通道，風阻太大，僅少數會流經奈米鑽石針尖狀結構所構成的通道。風經過奈米通道時不會流經其中，等同於風只是流經風洞，奈米級的針狀結構在高風速下，可被視為是平面鑽石膜突顯不出其效果。
本論文也研發一維奈米鑽石針尖狀結構在多晶鑽石表面上的場發射應用，藉由一維的奈米結構可以提高在針尖上結構的電場，進而提高場發射效果。一維奈米鑽石針尖狀結構，加入了nitrogen plasma immersion ion implantation (PIII)的製程，能增進一維奈米鑽石針尖狀結構的場發射效果，得到起始電場3 V/um下達到10 uA/cm2電流密度而且在9 V/um電場下~4 mA/cm2電流密度。
在微米級鑽石顆粒上不同的成長參數會影響著奈米鑽石的形貌，藉由在基板上加適當偏壓可以得到較長的奈米針狀結構，反應氣氛加入氬氣密度時有顯著的改變。然而微米鑽石的散熱效果十分顯著，奈米鑽石針尖狀結構的效果不是十分明顯。在有外加風速下，微米鑽石的依然顯著增加散熱效果可以達到了~13 %。推測微米級鑽石顆粒所構成的微米級通道在外加風速下會通過且暴露的鑽石面積比較大，然而奈米級鑽石針尖狀結構所增進的效果依然有限。
本論文也探討在平板及角椎狀的矽基板上奈米碳薄片成長的技術。利用角錐狀的結構，可改變形貌因子增加電場的加強效應，能增進奈米碳薄片的場發射效果，得到起始電場3.2 V/um下達到10 uA/cm2電流密度而且在7 V/um電場下~2.5 mA/cm2電流密度。有關結果收錄在附錄A。

Vertically aligned nano-scale diamond tips have been successfully synthesized on rugged polycrystalline diamond substrates and micro-size diamond particles. Nano-scale diamond tips, ~ 1 um in height and the diameter at the bottom of a nanotip is ~200 nm, were synthesized on diamond film for 2 hr. The thermal properties of a diamond heat spreader made of nano-scale diamond tips on a diamond/Si substrate were measured. The nano-scale diamond tips act as a nano-scale “fin structure”, which may provide extended surface area to dissipate heat away. A concept of “quasi thermal resistance” is developed to characterize the thermal spreading properties of the nano-scale diamond tips/diamond/Si structures at various air flow rates in a wind tunnel. Experimental results indicate that nano-scale diamond tips help to improve the thermal spreading properties, especially at zero air flow rate. At an air flow rate higher than zero, the nano-scale diamond tips slightly effect on improving heat spreading property since the air flow would be limited among nano-scale diamond tips and the extended surface area would be neglected. When nano-scale diamond tips are deposited on the diamond/Si substrate, the quasi thermal resistances are reduced further by ~7.3 % at 0 CFM, ~2 % at 3 CFM and ~1 % at 6 CFM.
Diamond nanotips with high aspect ratio can be synthesized on the diamond/Si substrates by planar microwave plasma enhanced chemical vapor deposition. The field emitter made of the as-grown diamond nanotips suffers with high turn-on voltage and low emission current density. A nitrogen PIII treatment can improve the field emission properties. A low turn-on field of 3 V/um and a high current density of 4 mA/cm2 at 9 V/um are achieved.
Vertically oriented nano-scale diamond tips were synthesized on the micro-size diamond particles in a planar microwave plasma enhanced chemical vapor deposition chamber by varying synthesis time, bias voltage, and gas ratio. The optimum bias voltage to achieve nano-scale diamond tips and the density of nano-scale diamond tips can be tuned primarily by varying the gas ratio of Ar/CH4/H2.
The quasi thermal resistances of both micron-size and nano-size diamond structures were determined at various flow rates in a wind tunnel. Experimental results indicate that micron-size diamond is much more effective in heat dissipation than nano-size diamond. With 350-420 um diamond particles on top of the aluminum plate, the quasi thermal resistance reduces by 13 % independent of air flow rate. The reduction of quasi thermal resistance is attributed to the increase of the uncovered diamond surface area. Diamond particles act as a fin structure in the design of a heat spreader. Experimental results support that nano-size diamond structures play no role in the reduction of quasi thermal resistance at various air flow rates. No heat dissipation is contributed from the nanoscale channels among nano-size diamond structures.
In appendix A, Carbon nanosheets were success to grow uniformly on flat Si and pyramidal Si in a plasma-enhanced chemical vapor deposition process. By replacing flat Si(100) by pyramidal Si(100) as the substrate, the field emission performance of carbon nanosheets was greatly improved. A low turn-on field of 3.2 V/um and a high current density of 2.5 mA/cm2 at 7.0 V/um were achieved for the field emitter of carbon nanosheets/pyramidal Si(100). The enhancement factor β increases from ~4400 to ~9500 at low electric field when carbon nanosheets are synthesized on pyramid Si(100) rather than flat Si(100).

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