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研究生： 楊哲寧
Yang, Tse-Ning
論文名稱： 硒化鋅奈米線應用於高性能軟性光偵測元件
High Performance Flexible Photodetector Based on ZnSe Nanowires
指導教授： 陳力俊
Chen, Lih-Juann
口試委員: 吳文偉
Wu, Wen-Wei
呂明諺
Lu, Ming-Yen
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2017
畢業學年度： 105
語文別： 英文
論文頁數： 70
中文關鍵詞： 硒化鋅 、奈米線 、軟性 、光偵測
外文關鍵詞： ZnSe, nanowire, flexible, photodetector
相關次數： 點閱：1  下載：0 
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    • 近年來，軟性光偵測元件因其具有優良的可撓曲特性、穩定的電性和高靈敏度被廣泛應用在穿戴式裝置。某些一維奈米結構的半導體材料因為具有很好的光電性質為柔性光電探測器提供許多機會和功能。II-VI族n-type硒化鋅半導體材料具有約2.67 eV (約465 nm)直接能隙。相對於本質半導體(矽)、III-V族半導體(砷化鎵)，硒化鋅對藍光/紫外光的偵測更為靈敏。在本論文研究中，高長徑比的單晶硒化鋅奈米線於雙石英管系統中經由化學氣象沉積成長於矽基板上。為了瞭解硒化鋅奈米線的光電性質，利用黃光微影製程製作金屬-半導體-金屬結構的單根硒化鋅奈米線光偵測元件，並使用405 nm波長的藍光雷射於不同光功率及施加不同偏壓的條件下量測。在製作軟性光偵測元件上，成功的透過接觸轉印的方式將其轉移至PDMS/聚亞醯胺基板，再將金指差電極鍍在硒化鋅奈米線上作為電極。在相同的量測條件下，硒化鋅軟性光測元件具有很高的光開關特性及很快的光響應速度，此外，透明的聚亞醯胺基板提供傑出的可撓曲性，使此光偵測元件可以在彎曲180度的情況有效的運作。種種優良性能顯示以硒化鋅奈米線為材料所製備的軟性光偵測元件有潛力作為實際應用的元件。

    In recent years, flexible photodetectors are widely utilized in wearable devices and other special applications due to the advantages of outstanding flexibility, superb electronic stability and high detectivity. One-dimensional nanostructures of semiconductors provide many opportunities and capabilities for applications in flexible photodetectors as they may possess great photoelectric properties. Zinc selenide (ZnSe), a II–VI compound n-type semiconductor with a wide direct bandgap of ~2.67 eV (~465 nm), has higher sensibility of blue/UV light, comparing to other intrinsic (Si) and III-V semiconductors (GaAs). In the present research, single-crystalline ZnSe nanowires with high aspect ratio were grown on silicon substrate in a double tube system by chemical vapor deposition (CVD). A single ZnSe nanowire photodetector with a meatal-semiconductor-metal (MSM) structure was fabricated by typical photolithography procedures. The basic photoelectric properties of a single nanowire under 405 nm blue laser irradiance with different power intensities and bias voltages were investigated. For flexible device, ZnSe nanowires were successfully transferred on PDMS/polyimide substrate via the contact printing method. Au interdigitated electrodes were then deposited on ZnSe nanowires to form a MSM structure. With same measurement conditions, the as-fabricated photodetector exhibits high on/off photoswitching characteristic and fast photoresponse speed both on rise and on fall. In addition, the highly transparent polyimide substrate provides excellent mechanical flexibility so that our photodetector can be effectively operated under bending up to 180o. The excellent performance indicates that the high quality ZnSe nanowires based flexible photodetector on transparent polyimide substrate may lead to practical applications.

    目錄 Abstract I 摘要 III 目錄 IV Chapter 1 Introduction 1 1.1 Photodetector 1 1.1.1 Photoconductive Effect 1 1.1.2 Photoconductor 2 1.1.3 Photodiode 3 1.2 Flexible Electronics 4 1.2.1 Flexible Photodetector 5 1.3 Nanotechnology 6 1.3.1 Nanostructures 7 1.3.2 One-Dimensional Nanostructures 9 1.3.3 Vapor-Liquid-Solid (VLS) Growth Mechanism of 1D Nanomaterials 9 1.3.4 Vapor-Liquid-Solid Growth 10 1.4 Zinc Selenide (ZnSe) 12 1.4.1 Structures of ZnSe 13 1.5 Metal-Semiconductor Contact (MS contact) 14 1.5.1 Ohmic Contact 15 1.5.2 Schottky Contact 16 1.5.3 Metal-Semiconductor-Metal Contact Photodetector 18 1.6 Motivation 19 Chapter 2 Experimental Procedures 20 2.1 Experimental Procedures 20 2.1.1 Preparation of Substrates 20 2.1.2 Synthesis Procedures of ZnSe Nanowires 22 2.1.3 Fabrication of Single ZnSe Nanowire Photodetector 23 2.1.4 Fabrication of ZnSe Nanowires Based Flexible Photodetector 25 2.1.5 Photoelectric Properties Measurements 27 2.2 Experimental Systems 28 2.2.1 Rapid Thermal Annealing (RTA) 28 2.2.2 Scanning Electron Microscope (SEM) 29 2.2.3 Energy Dispersive Spectrometer (EDS) 30 2.2.4 X-ray Diffraction (XRD) Analysis 31 2.2.5 Transmission Electron Microscope (TEM) 32 2.2.6 UV-Vis Spectroscopy 33 2.2.7 Photoluminescence (PL) 34 2.2.8 Electron Beam Vapor Deposition System 35 Chapter 3 Results and Discussion 37 3.1 Properties and Characteristics of ZnSe Nanowires 37 3.1.1 SEM Observation 37 3.1.2 EDS Analysis 38 3.1.3 XRD Analysis 39 3.1.4 TEM Observation 40 3.1.5 UV-Vis Absorbance Spectrum 41 3.1.6 PL Spectrum 42 3.2 Single ZnSe Nanowire Photodetector 43 3.2.1 Au-ZnSe-Au Structure (M-S-M Structure) 44 3.2.2 Current versus Voltage (I-V) Curves Characteristics 46 3.2.3 Photoswitching Characteristic 49 3.2.4 Comparison of Single ZnSe 1D Structure Photodetectors 52 3.3 ZnSe Nanowires Based Flexible Photodetector 53 3.3.1 Current versus Voltage (I-V) Characteristics 53 3.3.2 Photoswitching Characteristics 54 3.3.3 Reliability Characteristics 57 3.3.4 Comparison of Flexible Photodetectors 61 Chapter 4 Summary and Conclusions 62 Chapter 5 Future Propects 63 5.1 UV Detection of The Devices 63 5.2 Organic-Inorganic Hybrid Photodetector 63 References 65

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