在本實驗中，我們已可控制稀土-過渡金屬元素TbFeCo之成分與垂直異向性，並以此磁性材料製作電流水平膜面型垂直式巨磁阻(CIP-pGMR)磁性多層膜，且其磁阻變化率可高達4.1%。然而藉由磁光柯爾效應的量測可知，垂直巨磁阻多層膜之層間靜磁能耦合作用將影響自由層磁矩之翻轉特性，並使多層膜磁矩方向傾向靜磁能最低能量態。然而隨著間隔層Cu厚度逐漸增加，此交互作用力雖然大幅降低，但由於電流在水平膜面間流動時有電流分流效應的因素，磁阻變化率會隨之下降，此外多層膜之電阻值亦隨之降低。理想的間隔層厚度為2nm，此時巨磁阻多層膜之層間靜磁能耦合作用趨近於零，且磁阻變化率仍保持3.25%。
在製備電流垂直膜面型垂直式巨磁阻(CPP-pGMR)之磁性多層膜之前，我們首先選用了AlSiCu作為電極材料，並以AlSiCu/Cu多層膜之結構，解決了表面粗糙度的問題。爾後將巨磁阻磁性多層膜鍍製於其上，藉由磁性質的量測可知，TbFeCo/Co90Fe10複合磁性層之垂直異向性與成分並不會因下電極的影響而有所改變。
在元件的製程中，我們設計了三種製備方式，第一種已經製備完成，但可惜的是在最後量測時，發生因Au與Si基板附著力太差而無法打線量測的問題。然而第二種及第三種製程，雖然我們已有不錯的微影技術，但卻發現顯影液(四甲基胺水)會與AlSiCu反應，導致下層TbFeCo的顯露，並有可能引發氧化或是腐蝕的問題。因此為降低蝕刻製程的複雜性而以AlSiCu作為保護層是不可行的，必須改以其他較穩定且不易氧化的材料來取代。

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