摻氟非晶系碳膜的研製｜國立清華大學博碩士論文庫

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研究生：	陳俊淇 Chen Chun Chi
論文名稱：	摻氟非晶系碳膜的研製 PREPARATION AND PROPERTIES OF FLUORINATED AMORPHOUS CARBON FILMS BY ECR-CVD METHOD
指導教授：	朱鐵吉柯富祥丁志華
口試委員:
學位類別：	碩士 Master
系所名稱：	原子科學院 - 生醫工程與環境科學系 Department of Biomedical Engineering and Environmental Sciences
論文出版年：	2000
畢業學年度：	88
語文別：	英文
中文關鍵詞：	低介電常數、非晶系碳膜、電子迴旋共振、化學氣相沉積
相關次數：	點閱：3 下載：0
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本論文以電子迴旋共振化學氣相沉積系統（ECR-CVD）研製摻氟的非晶系碳膜（fluorinated amorphous carbon film， a-C：F），作為低介電常數的材料。實驗發現，沉積a-C：F薄膜較佳的條件為：氣體流量: Ar/CH4/CF4 = 30/10/20 sccm、基板偏壓=-30伏特、微波功率=400~600 watts、基板溫度=50oC~100oC，薄膜有較低的介電常數值，約為2.2，而漏電流-電壓特性的檢測，顯示薄膜優良的介電特性。由薄膜的FTIR吸收光譜得知薄膜主要由CFn（n=1-3）的鍵結所構成，其中亦包含少量的C-H鍵結。在同一微波功率下，沉積速率隨基板溫度升高而降低，此乃因CFn原子團熱穩定性不佳，基板溫度愈高，愈不容易沉積，此結果也在碳氟化合物（CxFy）的熱脫附質譜分析中得到印證。熱脫附質譜的分析顯示a-C:F薄膜為親水性，且有氟原子的釋出。因此，以a-C:F 薄膜為介電層，覆蓋層（capping layer）是必要的，而所應用的覆蓋層能否抑制CFx原子團的解離，也需進一步探討。

Contents
Chapter 1 Introduction

1.1 Background and motivation

1.2 Application and technique of low-k materials

1.3 Introduction of low-k candidates

1.4 Materials for low-k intermetal dielectric in our study

1.5 Organization of thesis

Chapter 2 Experimental and characterization method

2.1 Process description

   2.1.1 Sample preparation

   2.1.2 ECR-CVD

   2.1.3 Capacitor fabrication

   2.1.4 Flow chart

2.2 Characterization method

   2.2.1 Material properties

        FT-IR

        n&k

   2.2.2 Electrical properties

        I-V

        C-V

   2.2.3 Thermal properties

        TDS-API-MS

Chapter 3 Results and discussion

3.1 Material properties

3.2 Thermal properties

3.3 Hygroscopic properties

3.4 Electrical properties

3.5 Dielectric properties

3.6 Adhesion properties

Chapter 4 Conclusions and suggestions for future work

4.1 Conclusions

4.2 Suggestions for future work

Reference

References
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