根據2009年的半導體設計藍圖(ITRS)，應用於射頻積體電路上的金屬—絕緣體—金屬(metal-insulator-metal, MIM)電容，在2016年就會碰上技術上的困難，因此必須提早研究可行的解決方案。因此近年來，高介電常數材料被不斷的研究使MIM電容具有更大的電容密度及較小的漏電流密度，然而應對於未來需求更高的電容密度要求，將高介電常數的材質結晶化來得到更高的介電常數是很有可能的，但卻很少人研究如何降低結晶所需要的溫度來符合後段製程所需，另外也很少人探討如何避免結晶化後造成的漏電流問題。所以我們實驗分兩部分，第一部分，使用摻雜的方式降低二氧化鋯(ZrO2)所需的結晶溫度，另外透過另一層非晶層降低漏電流；實驗第二部分，應用更高介電常數的材質配合高電子能障的介電層來實現高效能電容。
在實驗第一部份中我們利用兩層ZrO2中間摻雜鍺(Ge)，當Ge擴散進入ZrO2會降低ZrO2所需要的結晶溫度，因此四方晶形態(tetragonal phae)的ZrO2在低溫500℃下達成，經過我們的實驗發現，其介電常數高達36.46，電容密度高達27.83 fF/μm2，而等效氧化層厚度(EOT)為1.2 nm，然而結晶後所造成的漏電非常高，-2 V時高達6.94x10-5 A/cm2，並且電容的二次電壓係數(quadratic voltage coefficient of capacitance, α)高達81129 ppm/V2，此α值越高代表電容越不穩定，而在上方覆蓋上一層非晶型的ZrO2(摻雜8%的La2O3)當作漏電阻擋層，成功的將原本-2 V時高達6.94x10-5 A/cm2的漏電流降低至9.97x10-7 A/cm2 ，並且大幅加強電容穩定度α值從81129 ppm/V2改善成3135 ppm/V2，然而不可避免的電容密度稍微下降至19.5 fF/μm2。另外擁有非晶型的ZrO2(摻雜8%的La2O3)當作漏電阻擋層的試片其漏電流機制符合蕭基發射(Schottky emission)代表我們若是使用更高功函數金屬，應該可以降低漏電流。
在實驗第二部份我們使用更高介電常數的材質二氧化鈦(TiO2)，配合高電子能障的三氧化二釔(Y2O3)來當作漏電阻擋層，我們發現單純使用TiO2當作介電層可以得到極高的電容密度，在經過400℃或500℃熱處理的試片分別為37.13 fF/μm2與53.74 fF/μm2，但是漏電流也是非常大，在-1V分別為1.6x10-4 (A/cm2)與0.12 (A/cm2)，符合我們對TiO2的印象，高介電常數與低電子能障。再我們為TiO2添加漏電阻擋層Y2O3後，我們成功的將漏電流壓低到8x10-9 (A/cm2)與4x10-9 (A/cm2)，而500℃的漏電流較低是因為高溫下更多的氧與氮進入介電層修補介電層中的缺陷，另外電容密度高達28.64 fF/μm2與32.21 fF/μm2，最後電容穩定性α值也不錯分別為3787 ppm/V2與3490 ppm/V2。這種優異表現使雙層結構的TiO2/Y2O3 MIM電容非常適合應用於各種電路元件設計上面。

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