研究生: |
賴志賢 Lai, Chih-Hsien |
---|---|
論文名稱: |
以0.35μm CMOS實現極精簡架構之整合型高敏感度溫度感測電路和參考電壓電路 A Simple in-situ High-Sensitivity Temperature Sensor and Constant Voltage Generator IC in 0.35μm CMOS |
指導教授: |
徐永珍
Hsu, Yung-Jane |
口試委員: |
劉堂傑
謝秉璇 |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 半導體元件及製程產業研發碩士專班 Industrial Technology R&D Master Program on Semiconductor Devices and Manufacturing Process |
論文出版年: | 2011 |
畢業學年度: | 100 |
語文別: | 中文 |
論文頁數: | 72 |
中文關鍵詞: | 溫度感測器 |
相關次數: | 點閱:1 下載:0 |
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隨著半導體產業蓬勃發展,溫度感測器亦由傳統的白金測溫電阻、熱敏電阻等大測溫元件邁入了積體電路的世界。在IC式溫度感測器的架構中,輸入端通常需要一個穩定不隨溫度改變的參考電壓與一個正比絕對溫度PTAT(Proportional to absolute temperature)電壓,之後接上類比數位轉換器ADC轉成數位訊號,再進行數位訊號處理做各種不同的應用。本論文使用雙載子電晶體(bipolar transistor)做為溫度感測的單元,以一個極簡單的電路即可同時實現一穩定的參考電壓與一高溫度敏感度PTAT電壓訊號,如此一來後方ADC對解析度(resolution)的要求將不那麼嚴苛。本晶片透過國家晶片設計中心,以TSMC 2P4M 0.35μm CMOS標準製程來實現,並針對-20℃~125℃進行實際晶片量測,功能正常,PTAT電壓之平均溫度敏感度可達6.67 mV/℃,參考電壓斜率變化為 -0.13 mV/℃,整體電路操作在3.3 V,消耗功率169 μW,核心晶片面積為290 X 220 μm2。
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