目前應用於有機薄膜電晶體(Organic Thin Film Transistors；OTFT)的高分子材料，為了有好的載子遷移率(Mobility)和電流開關比，許多研究團隊對於聚3-己基噻吩( Poly-3-hexyl thiophene；P3HT )層狀性質進行廣泛研究，目前為止P3HT的載子遷移率和電流開關比，是目前所有高分子中較佳的，其他高分子鮮少可自組裝成與P3HT相似的有序層狀結構，但高排列性的P3HT合成步驟困難且材料價格昂貴，因此尋找結構與P3HT類似但價格較便宜製程較方便的高分子材料成為另一個重要的研究課題。
聚苯胺為成本較低的高分子，但以一般化學聚合方法的含支鏈聚苯胺衍生物，無法有效的控制主鏈間鍵結位向，因此材料本身的型態較不易控制。而我們無意發現當聚苯胺以本實驗室所開發的同步還原取代反應(Concurrent Reduction and Substitution；CRS reaction)接上正丁硫醇後，正丁硫聚苯胺烷聚苯胺衍生物(Pan-SBu)經純化步驟得到硫氮原子數比(S/N ratio)為0.25的取代量後。只需溶在NMP中經過長時間攪拌後塗佈，即可得到Pan-SBu層狀結構薄膜，薄膜以SEM、TEM切片發現當Pan-SBu攪拌6天後開始有巨觀層狀結構產生，且以out-of-plane 和以及in-plane PXRD鑑定後，發現其層狀排列方式與P3HT類似。
為了瞭解層狀Pan-SBu是否也有與P3HT一樣具有較佳的載子遷移率，我們將Pan-SBu製成二極體元件，再以空間電荷侷限電流(Space Charge Limited Current；SCLC)公式推估得到Pan-SBu載子遷移率的範圍為9.5 × 10-6 cm2/Vs ~ 9.5 × 10-5 cm2/Vs，與P3HT層狀的二極體載子遷移率(1.33 × 10-5 cm2/Vs ~ 3.30 × 10-4 cm2/Vs)已相去不遠，因此Pan-SBu與P3HT相比不僅簡化了製程步驟也降低了材料成本，往後更有機會可將Pan-SBu應用在有機薄膜電晶體元件上。

Recently, vast amomnt of research works have been focused on improving the chemical structures and fabrication technologies for organic thin-film transistors (OTFTs) via vacuum-deposited or solution-processed organic semiconducting films. Poly(3-hexylthiophene) (P3HT) has been thoroughly studied for polymer OTFTs, but there are still some important issues remain to be solved such as the complicated synthetic process for highly ordered regioselective P3HT and high-cost material. Here we found that some substituted polyaniline can be self-assembled into layered structure similar to that of P3HT, and the synthetic process is much easier and cheaper.
The butylthio-substituted polyaniline (Pan-SBu), synthesized by concurrent reduction and substitution (CRS) reaction method, was found to be able to form layered structures under appropriate casting conditions. The degree of arrangement order of Pan-SBu deposited on glass substrate highly depends on the degree of polymer chain extension in solution. The resultant lamellar structures in the cast thin film were studied by SEM, TEM, and PXRD. The charge carrier mobility of the lamellar Pan-SBu was measured based on a diode device to be 9.5 × 10-6 cm2/Vs ~ 9.5 × 10-5 cm2/Vs, which is similar to the previously reported carrier mobility (1.33 × 10-5 cm2/Vs ~ 3.30 × 10-4 cm2/Vs) of P3HT.

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