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研究生： 王韋婷
Wang, Wei-Ting
論文名稱： 應用在RRAM記憶體之氧化鋅薄膜及其電極材料開發
Effect of electrode material on the resistance switching of ZnO film for RRAM applications
指導教授： 吳泰伯
Wu, Tai-Bor
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2009
畢業學年度： 97
語文別： 英文
論文頁數： 105
中文關鍵詞： 電阻式記憶體 、氧化鋅 、電極材料
相關次數： 點閱：2  下載：0 
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    • In this thesis, we successfully fabricated the highly (002) oriented ZnO thin films of 50 nm thick were prepared on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Various top electrodes were deposited on ZnO films and electrode material dependence on resistance switching characteristic was evaluated with structure of TE/ZnO/Pt.
    Different electrode materials selected in this thesis were used to elucidate that the role of electrode plays in resistive switching behavior. Moreover, the metal electrode chosen in this thesis is based on work function of metal and free energy of metal oxide formation.
    For ZnO films, Pt/ZnO/Pt, Cr/ZnO/Pt, Al/ZnO/Pt, Mo/ZnO/Pt devices show reproducible bi-stable resistance switching behavior. Ratio of HRS to LRS is about 20~50 except Mo/ZnO/Pt device. According to the variation of resistive switching parameters, Cr/ZnO/Pt device exhibited better resistance switching properties in comparison with Pt/ZnO/Pt, Al/ZnO/Pt, and Mo/ZnO/Pt devices.

    Chapter 1 Introduction 1 Chapter 2 Literature 6 2.1 Introduction of memory 6 2.2 Emerging non-volatile memories 7 2.2.1 FeRAM (Ferroelectric RAM) 7 2.2.2 MRAM (Magnetic RAM) 7 2.2.3 PCRAM (Phase change RAM) 8 2.2.4 RRAM (Resistance RAM) 9 2.3 RRAM (Resistance Random Access Memory) 9 2.3.1 PrCaMnO3 9 2.3.2 SrZrO3 10 2.3.3 Organic materials 11 2.3.4 Transition metal oxide 12 2.3.4.1 Preliminary study of ZnO thin films in RRAM 13 2.3.5 Mechanism of RRAM (Resistance RAM) 14 2.3.5.1 Filamentary model 14 2.3.5.3 Charge-trap in small domain 15 2.3.5.3 Conducting path 15 2.4 Effect of electrode material on resistance switching 16 2.4.1 Work function of electrode 16 2.4.2 Free energy of formation of oxide 17 2.4.3 Complex 18 Chapter 3 Experimental method and procedures 33 3.1 Experimental procedures 33 3.1.1 Substrate preparation 33 3.1.2 Zinc oxide (ZnO) thin film preparation 33 3.1.3 Top electrodes preparation 34 3.2 Property analysis 34 3.2.1 Film thickness 34 3.2.2 Crystalline structure 34 3.2.3 Composition analysis 35 3.2.4 Electrical properties 35 Chapter 4 Results and Discussion 41 4.1 Electrical analysis of electrode materials 41 4.1.1 Sheet resistance 41 4.1.2 Resistivity 42 4.2 Analysis of ZnO film 43 4.2.1 Crystalline structure 43 4.2.2 Film thickness 43 4.2.3 Analysis of chemical bonding state 44 4.3 Chemical analysis by XPS 44 4.3.1 Cr-ZnO interface 44 4.3.2 Al-ZnO interface 45 4.3.3 Mo-ZnO interface 46 4.3.4 Pt-ZnO interface 46 4.4 Electrical property 47 4.4.1 Pt/ ZnO/Pt devices 47 A. Basic characteristic of I-V curve 47 B. Effect of current compliance 48 C. Statistic analysis 48 4.4.2 Cr/ ZnO/Pt devices 48 A. Basic characteristic of I-V curve 48 B. Effect of current compliance 49 C. Statistic analysis 49 4.4.3 Al/ ZnO/Pt devices 50 A. Basic characteristic of I-V curve 50 B. Effect of current compliance 50 C. Statistic analysis 51 4.4.4 Mo/ ZnO/Pt devices 51 A. Basic characteristic of I-V curve 51 B. Statistic analysis 52 4.4.5 Comparison of material of top electrode 52 A. I-V characteristics 52 B. Set and reset voltage 53 C. Set and reset current 53 D. Resistance distribution 54 E. Retention 54 4.5 Curve fitting 55 4.5.1 Pt/ZnO/Pt devices 57 4.5.2 Cr/ZnO/Pt devices 58 4.5.3 Mo/ZnO/Pt devices 58 4.5.4 Al /ZnO/Pt devices 59 4.6 Mechanism of resistance switching 60 Chapter 5 Conclusion 100 Reference 102

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