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| 研究生： |
羅億丞 Yi-Cheng Luo |
|---|---|
| 論文名稱： |
銅奈米線嵌入在可撓式基板的研究 Copper Nanowires Embedded on Flexible Substrate |
| 指導教授： |
葉鳳生
Fon-Shan Huang |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering |
| 論文出版年： | 2006 |
| 畢業學年度： | 94 |
| 語文別： | 中文 |
| 論文頁數： | 80 |
| 中文關鍵詞： | 奈米銅線 、置換 、可撓式基板 、聚亞醯胺 、對二甲苯的聚合物 、轉印 |
| 外文關鍵詞： | copper nanowires, replcement, flexible substrate, polyimide, parylene, transfer |
| 相關次數： | 點閱：2 下載：0 |
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本論文主要在於使用電子束微影技術配合置換方法置換出銅奈米線，並將銅奈米線轉印在parylene/polyimde 基板上，同時比較轉印前後的表面和電性有何不不同。另外發展銅奈米線配合金屬光罩定義電極，直接使用probe station 作四點電性量測。
首先，使用電子束微影在α-Si(400□)/Si3N4(500□)/Si 曝出奈米溝槽。在置換方法方面，置換條件為硫酸銅3g/L搭配HF 70c.c./L置換時間20s，得到寬110nm，厚80nm的奈米銅線。同時也把置換出來的銅線轉印在parylene/polyimde 基板上。在壓印壓力500psi，溫度150℃以及壓印壓力500psi，溫度150℃條件下成功轉印奈米線。並把轉印前後的銅奈米線作表面及電性量測，來比較兩者的不同。用C-AFM量出置換的轉印前銅奈米線電阻率1.01 X10-5 Ω-cm，轉印後的銅奈米線2.14~4.01 X10-5 Ω-cm。並把奈米線作了3M膠帶測試，在壓印溫度180℃的銅奈米線可通過測測試。
為了改善C-AFM電性量測造成的接觸電組的誤差，使用奈米導線搭配金屬光罩定義電極直接在探針系統上測量到電阻率為7.24×10-6Ω-cm 。
The E-Beam lithography combined with replacement method can be used to fabricate copper nanowires. The copper nanowires were then transferred onto parylene/polyimde substrate. The roughness and electrical characteristic of the copper nanowires were compared with that of the transferred copper nanowires. Meanwhile, intergrated copper nanowire with electrical pad by using metal mask, then performed electrical measurement characteristic on probe station.
First at all, the nano trench was defined by e-beam lithography on α-Si(400□)/Si3N4(500□)/Si. And the copper nanowires were formed by replacement method. The plating solution were 3g cupric sulfate (CuSO4•5H2O) with 70cc HF/L. We can obtained the copper nanowires with width 110nm, height 80nm. The copper nanowire were then successfully transfer onto parylene/polyimde substrate with imprinting pressure 500psi, temperature 150℃ and imprinting pressure 400psi, temperature 150℃. The difference of surface roughness and electrical characteristic between copper nanowires and the transferred copper nanowires were also compared. We obtained the resistivity of nanowires by C-AFM. The resistivity of copper nanaowires is 1.01 X10-5 Ω-cm and the resistivity of transferred copper nanaowires is 2.14~4.01 X10-5 Ω-cm. The adhesion of cooper nanowires and transferred cooper nanowires were also tested by 3M. The transferred cooper nanowires which imprint temperature is 180℃ can pass the 3M test.
In order to reduce the electrical measurement error of contact resistance by C-AFM, we developed the technique of copper nanowire integrated metal pad mask, then measured electrical characteristic on probe station. The resistivity of this method is 7.24 X10-6 Ω-cm.
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