研究生: |
林聖哲 Lin, Sheng-Che |
---|---|
論文名稱: |
以虛擬電路填充最佳化積體電路佈局之方法 IC layout optimization by dummy filling methods |
指導教授: |
陳飛龍
Chen, Fei-Long |
口試委員: | |
學位類別: |
博士 Doctor |
系所名稱: |
工學院 - 工業工程與工程管理學系 Department of Industrial Engineering and Engineering Management |
論文出版年: | 2010 |
畢業學年度: | 98 |
語文別: | 中文 |
論文頁數: | 110 |
中文關鍵詞: | 化學機械研磨 、毫秒快速高溫熱退火 、虛擬電路填充 、基因演算法 、模擬退火法 、可製造性設計 、線性規劃 |
外文關鍵詞: | Chemical Mechanical Polising, Milli-Second Anneal, Dummy Filling, Genetic Algorithm, Simulated Annealing, Design for Manufacturability, Linear Programming |
相關次數: | 點閱:2 下載:0 |
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降低製造的變異,提升良率是製造的目標,以往縮小製造變異的方法主要來自綿密的檢驗和統計製程管制,在製程或機台發生問題之前或問題之初期就能察覺,進行機台狀態維修或停機,讓問題不要繼續擴大。但進入奈米世代,許多製程對積體電路佈局的敏感度越來越顯著,製程的變異比例也隨著線寬的縮小而提高,許多與電路佈局設計相關的問題已經無法用傳統的檢驗和管制來解決,必須追本溯源到電路佈局設計來做改變與配合以提升其可製造性,這就是為何可製造性設計(Design for manufacturability)近來非常受到半導體產業界的重視。
化學機械研磨的平坦度和電路佈局(circuit layout)密度的均勻度有高度相關,虛擬電路填充在空曠區以增加整體佈局密度的均勻度證實是可行方法,且有許多填充最佳化的方法已經提出,但目前方法的目標函數對多功能的測試晶片(Combo-chips)並不適用,本研究提出以最小變異數法來最佳化多功能的測試晶片的佈局密度之均勻度以提升其可製造性。此外,毫秒快速高溫退火製程和電路佈局局部的吸收率息息相關,而局部的吸收率則和材質的組合相關,本研究提出針對毫秒高溫退火製程提出虛擬電路填充最佳化方法。
本研究分別探討化學機械研磨和毫秒高溫退火的虛擬電路填充最佳化,再以兩階段共同最佳化的方法探討化學機械研磨和毫秒高溫退火的虛擬電路填充的共同最佳化以及流程的整合。從實例驗證的結果發現本研究所提出之虛擬電路填最佳化之方法能有效提升佈局密度均勻度與表面吸收率的均勻度以提昇佈局設計在化學機械研磨和毫秒高溫退火製程的可製造性。
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