本論文利用刮刀塗佈液態製程的方法製作綠色磷光有機發光二極體元件，同時對元件結構及材料選用上做改變，以順利的延長元件操作壽命。以共主體發光層之三層元件為研究開端，透過減少元件膜層數至單層結構，來降低載子堆積在有機膜層間的異質介面而造成注入不平衡的問題。再利用具熱交聯特性之電洞傳輸材料 Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4’-(N-(4-secbutylphenyl)diphenylamine] (TFB)塗佈薄層搭配單層元件結構及CsF/Al電極，最高電流效率可達31 cd/A，最大亮度達30000 cd/m2，順利平衡載子注入並改善層間載子堆積問題，順利的延長元件壽命，在起始亮度1000 cd/m2下操作壽命達80小時，起始亮度500 cd/m2下操作壽命達250小時，而在起始亮度100 cd/m2下可以超過400小時，順利的將研究團隊之綠色磷光有機發光二極體元件半衰操作壽命提升兩個數量級。
本論文另一部分，將研究團隊的小面積(0.45 cm2)藍色螢光有機發光二極體的成果驗證於大面積為4 cm × 3 cm的元件。刮刀塗佈過程利用加速度達到塗佈大面積的均勻性，可以塗佈出4 cm × 4 cm厚度均勻的薄膜，且前中後三段膜厚差約只有1 nm；且利用製程參數最佳化，減少發光面積4 cm × 3 cm的大面積元件中出現的缺陷，電流效率最高可達4 cd/A，此研究結果可以讓研究團隊著手製作一些概念性OLED產品。

In this study, blade-only solution process is used to manufacture small area green phosphorescence organic light-emitting diode. Not only do we change the device structure, but also select different material to prolong the operated lifetime of the device. We start with researching the triple-layer organic light-emitting diode. In order to prevent the charge accumulation between organic layers solving the problem about charge unbalance, we reduce number of organic layers to form single-layer structure. In addition to this, the device coated with a thin layer of cross-linked hole transporting material Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4’-(N-(4-secbutylphenyl)diphenylamine] (TFB) and matched with CsF/Al electrode can achieve maximum current efficiency to 31cd/A, and maximum luminance to 30000 cd/m2. The result shows that we successfully balance the charge injection and lower the charge accumulation. After the improvement, the operated lifetime can achieve to 80 hours under initial luminance of 1000 cd/m2,and the operated lifetime can achieve to 250 hours under initial luminance of 500 cd/m2, and longer than 400 hours under initial luminance of 100 cd/m2.
Trying to repeat the result of small area (0.45 cm2) blue fluorescence organic light-emitting diode in 4 cm by 3 cm large-area device is another part of this study. By using accelerated blade-coating, we can uniformly form a 4 cm by 4 cm thin film, which thickness difference between front end and back end with only 1 nm. After optimizing the factors of the process, the defect of the large-area device can be solved. Moreover, the device can achieve maximum current efficiency to 4 cd/A. Our research team can start to fabricate some conceptual product under this consequent.

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