發展橢圓儀即時膜厚監測系統及其應用在電漿蝕刻製程研究

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研究生：	徐士航
論文名稱：	發展橢圓儀即時膜厚監測系統及其應用在電漿蝕刻製程研究
指導教授：	林滄浪柳克強
口試委員:
學位類別：	碩士 Master
系所名稱：	原子科學院 - 工程與系統科學系 Department of Engineering and System Science
論文出版年：	2005
畢業學年度：	93
語文別：	中文
論文頁數：	287
中文關鍵詞：	橢圓儀、蝕刻、二氧化鉿
外文關鍵詞：	ellipsometry, etch, HfO2
相關次數：	點閱：1 下載：0
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本論文在發展即時單波長相位調變式橢圓儀，以應用在ICP電漿蝕刻機台蝕刻高介電係數材料二氧化鉿 (HfO2) 之製程監控。研究上並使用數位訊號擷取處理的方法（12 bit DAQ card）與Lock-in amplifier 所取得的訊號分析結果作比較。對於厚膜 (數千埃) 的量測，使用DAQ系統則靈敏度較Lock-in amplifier高，有較準確之結果。但對薄膜(100埃以下)，則DAQ系統取得之DC值與Lock-in amplifier有所差異，但對只使用橢圓參數 delta來推算厚度並不會有太大的影響。這是因為在量測100埃以下的薄膜時，實驗發現橢圓參數Psi不易準確量得，但delta則可準確量得，且可僅使用delta □準確算出膜厚。因此我們成功的建立橢圓儀量測系統應用在HfO2 的蝕刻製程監控上，可以即時監控膜厚以及蝕刻率的變化。

論文摘要..................................................I
致謝......................................................II
目錄.....................................................III
表目錄...................................................Ⅸ
圖目錄...................................................XI
第一章  研究背景..........................................1
第二章  研究目的..........................................3
第三章  文獻回顧..........................................5
3.1 單色光橢圓儀種類介紹..................................5
3.1.1歸零式橢圓儀.....................................6
3.1.2元件旋轉式橢圓儀.................................8
3.1.3調變式橢圓儀.....................................9
3.2文獻回顧分類總整理....................................9
3.2.1理論模型總整....................................10
3.2.2 Monochromatic ellipsometry平坦薄膜理論模型......18
3.2.3 以橢圓儀應用蝕刻材料分類........................21
    3.2.4 以橢圓儀應用蝕刻結構分類........................26
3.2.5 以橢圓儀蝕刻應用分類............................35
3.2.6 以橢圓儀入射光光源分類..........................36
第四章  基本原理.........................................37
4.1基礎光學理論..........................................37
4.1.1光的偏振性......................................37
4.1.2 描述電磁波的偏極態..............................39
4.1.3 基礎矩陣光學....................................50
4.1.4 常見的偏光現象應用 .............................58
4.2 如何利用相位調變式橢圓儀求得橢圓參數.................59
4.2.1 單層薄膜模型....................................62
4.2.2雙層薄膜模型....................................68
4.2.3 有圖案晶圓（Patterned Wafer）的計算型...............71
4.3程式計算不同情況下之橢圓參數.........................76
4.3.1 計算表面無任何圖案的情況........................76
4.3.2 計算表面有圖案的情況............................83
4.3.3 HfO2 理論模擬...................................96
第五章  實驗儀器與系統儀器校正..........................102
5.1早期實驗設備與線上蝕刻機台架構......................102
5.1.1 鎖相放大器簡介.................................107
5.1.2 彈調變器(PEM)基本原理.........................108
5.2 中期實驗設備與線上蝕刻機台架構......................110
5.2.1 訊號放大倍率的問題.............................110
5.2.2 交流與直流訊號雜訊的來源…....................114
5.2.2.1 在不開雷射下，日光燈的影響................114
5.2.2.2 在開雷射下，日光燈的影響..................116
5.2.2.3     電漿光對量測的影響.......................118
5.2.2.4 Bandpass filter 衰減光度大小..............120
5.2.3 Lock-in amplifier對於 DC 訊號的精確度............121
5.3 實驗系統校正與測試..................................126
5.3.1  Amplified Si Photodetector 放大倍率校正...........126
5.3.2  雷射光中心波長的測試..........................128
第六章  實驗結果與討論..................................129
6.1 Lock-in amplifier與DAQ card同步量測靜態試片實驗結果..129
    6.1.1 實驗架構與說明.................................129
    6.1.2 實驗結果與討論.................................131
6.2 Lock-in amplifier與DAQ card同步量測Poly-Si蝕刻製程...132
6.2.1 實驗架構圖.....................................133
    6.2.2 實驗結果與討論.................................133
6.3 Poly-Si 蝕刻厚度變化分析............................140
    6.3.1 理論分析.......................................140
    6.3.2 實驗結果與討論.................................143
    6.3.3 實驗數據擬合方法...............................144
6.4 入射角的校正........................................149
    6.4.1 理論模擬.......................................149
6.4.2 實驗步驟與擬合結果.............................151
6.5 HfO2厚度即時監控...................................153
6.5.1 單一參數計算厚度方法...........................153
6.5.2 雙變數與單變數計算厚度之比較...................155
6.5.2.1 Lock-in amplifier............................155
        6.5.2.2 DAQ card.................................161
        6.5.2.3各種方法求厚度比較與討論..................167
6.5.3 HfO2蝕刻製程厚度量測..........................170
6.5.3.1 改變ICP Power............................170
        6.5.3.2 改變ICP Power，固定Peak Voltage.............171
6.5.3.3 改變氣體比例實驗步驟與擬合結果...........173
        6.5.3.4 改變氣體壓力.............................175
第七章  結論............................................176
參考文獻................................................178
附錄 A  PEM架構理論推導過程............................181
附錄B  不同波長下的折射與吸收係數對應表................187
附錄C  Matlab 程式碼...................................191
C-1  Matlab 橢圓參數隨厚度變化理論計算程式 (平坦)....191
C-2  Matlab 橢圓參數隨厚度變化理論計算程式 (平行)....193
C-3  Matlab 橢圓參數隨厚度變化理論計算程式 (垂直)....196
C-4  Matlab 橢圓參數隨厚度變化理論計算程式 (HfO2)....201
C-5  Matlab計算Poly-Si厚度變化程式..................203
C-6  利用HfO2蝕刻特性找出入射角....................207
C-7  找出殘餘相位程式...............................211
C-8  找出第二層厚度(SiO2)程式........................214
C-9  計算HfO2厚度 (lock-in amplifier) ..................217
C-10 計算HfO2厚度 (DAQ) ...........................220
附錄D  操作步驟與系統校正..............................223
    D-1  鎖相放大器.....................................223
    D-2  光彈調變器 （PEM）..............................225
    D-3  溫控器＆雷射diode..............................226
D-4  步進馬達.......................................227
D-5  訊號放大器（SCU）...............................228
D-6  P角、A角、C角校正理論..........................243
D-6-1  偏極片（P）和析光片（A）的方位角校正.........243
D-6-2  光彈調變器方位角的零點校正...............246
D-6-3  PSA校正步驟.............................250
附錄 E  電容種類與濾波電路圖............................254
附錄 F  LabVIEW即時監控程式..........................256
F-1  LabVIEW即時監控Poly-Si厚度(lock-in amplifier)…….256
F-2  LabVIEW即時監控Poly-Si厚度(DAQ)…………...…….261
F-3  LabVIEW 線上即時監控HfO2厚度(DAQ) ………..........262
附錄 G  橢圓儀系統所使用的儀器規格表...................263

                                

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