本篇論文中，我們主要利用低頻雜訊及隨機電報雜訊的理論來研究退火製程對電子型通道金氧半場發電晶體的缺陷特性影響，進而對缺陷做定性及定量的研究分析。在實驗製作方面，為了了解電子捕捉行為及不同的退火程序之間的關係，分別在介電層上的第二層金屬(氮化鉭)鍍膜前及鍍膜後的元件上，以低溫且含氧的氣氛下進行退火。而在移除多晶矽的閘極犧牲層後，沒有進行退火製程的元件，則是用以做為對照組。

In this research, trap quantitative and qualitative properties in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with different annealing sequences have been studied on the basis of low-frequency (1/f) noise and random telegraph noise (RTN) analyses. To realize the relation between electron-trapping behavior and annealing processes, the rapid thermal annealing (RTA) procedure at 400 ℃ in oxygen ambient was utilized in the procedure before the tantalum nitride (TaN) layer or after the TaN layer. For comparison, the control samples were fabricated without the RTA procedure.

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Chapter 4
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Chapter 5
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