本實驗藉由酸蝕刻將P型多晶矽晶片表面形成微結構並降低其反射率，探討了其最佳抗反射層之厚度。之後以濕式氧化生長的氧化鋁薄膜形成PERC架構進行電池製作。找出125nm厚的氮化矽做為抗反射層可以比一般商業片的平均反射率還要低0.3%，也得出若背部有微結構，則可能會影響到氧化鋁之鈍化效果，使其少數載子生命週期上升幅度極小以及電池FF表現不佳；而經過KOH去除背部微結構後再進行氧化鋁薄膜的產生，可使鈍化層確實產生鈍化效果，將少數載子生命週期提升，之後製作之電池也有較佳之表現。

In this experiment, the microstructure of the P-type polycrystalline silicon wafer was formed by acidic etching and the reflectivity was reduced, and the thickness of the antireflection layer was optimized. We used wet oxidation for growing an aluminum oxide film to form a PERC structure in solar cell fabrication. We found a best 125 nm thickness for the silicon nitride antireflection layer, which has a 0.3% lower average reflectance compared with the commercial wafer. It was also found that if the back side of the wafer has microstructure, it may affect the passivation effect of the aluminum oxide. The minority carrier lifetime would increase very little for the silicon wafer with microstructure on the back side and the resultant cell performance were degraded. However after using KOH solution to remove the backside microstructure, we found that the passivation layer of aluminum oxide rendered an increase in the minority carrier lifetime, and the cell performance could be improved.

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