本篇論文針對0.18微米製程的矽鍺異質接面雙載子電晶體在高集極偏壓操作點作分析與模型建立。當矽鍺異質接面雙載子電晶體操作在高集極偏壓時，發現集極與基極會出現兩階段突然增加的電流，集基接面由於傳導帶不連續，會形成兩個量子能階，在高集基偏壓下，電子穿隧效應發生，會進而導致兩階段的電流突增。這些穿隧電子經過集基接面的空乏區，會因為累增效應而碰撞產生許多電子電洞對，其中電子與穿隧電子形成巨大的集極電流，電洞則從基極流出形成巨大的基極電流。這兩個量子能階剛好對應到兩個階段的電流突增。

兩階段的電流突增，剛好可以把集極電流跟基極電流各分成四個區段，每一個區段都可以用一個開關控制的路徑來做等效表示，模型中心加上一個正常偏壓下的雙載子電晶體的等效電路，當開關關閉時，元件特性與正常偏壓下相同，當開關打開時，元件特性為正常偏壓特性加上路徑流過的電流值。因此，此篇論文中的電晶體模型可以準確的使較大的操作電壓範圍都符合量測結果。利用這個矽鍺異質接面雙載子電晶體模型，可以模擬一些需要應用到異質接面雙載子電晶體操作在高集極偏壓下的的電路，進而朝向其在小訊號特性與交流特性作深入的分析。

高集極操作電壓的物理原理及分析，與廣大操作區間的電晶體模型，有許多有價值的應用，也可進一步的研究與發展。

The 0.18μm SiGe HBTs operated under high collector bias are analyzed and modeled in this thesis. A new mechanism is found that SiGe HBTs operate at high collector voltage will have two current jumps. These two sudden current jumps occur is due to tunneling effect of electrons in two quantum levels which are formed by conduction band discontinuity at collector-base junction. By multiplying those tunneling electrons with avalanche multiplication factor in the depletion region, large amount of electron-hole pairs will flow out of collector and base terminals. Two stages of current jumps in IC and IB take place correspond to tunnel effect of two quantum levels.

Two current jumps at high collector voltage split IC and IB into four regions, respectively. A device model is built by adding on a general HBT equivalent circuit with four switch controlled paths between both collector-emitter and base-emitter junction. Therefore, the model in this thesis can fit the measured results with widely operating range quite accurately. Some useful applications can be simulated by this developed model, such as small signal characteristics, ac characteristics, and circuit design. There may still have many valuable applications for this new mechanism.

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