近些年來鑽石切割技術已經成為矽晶太陽能電池之主流切割技術，過往的砂漿切割技術幾乎在太陽能電池之裸片切割市場上被取代。而針對鑽石線切割晶片因為晶片經過切割後之鑽石切割痕與過往砂漿切割之痕跡有差異，因此進行製絨會有所差異，必須調整過往之製程以達到降低反射率之目的。
本實驗利用p型單晶矽太陽能電池基板來進行實驗。本實驗將會對基板進行表面製絨之實驗，首先會以銅做為金屬催化劑之酸蝕刻液作進行表面製絨，製作出倒金字塔之結構。實驗之第一步蝕刻將會固定溫度及金屬濃度，並調整氫氟酸及雙氧水之濃度作為改變之參數，而本論文採取用與多數文獻相比較低氫氟酸濃度來進行實驗。而針對第一步之結果必須進行鹼溶液浸泡的步驟，以修飾表面形貌得到較佳之倒金字塔結構，最後會藉由拍攝SEM去分析其形貌結構，並藉由反射率之量測，觀察其結構與反射率之間的關係，本實驗也將與商用的正金字塔形貌結構片作為反射率量測之比較片並且將量測晶片之厚度得第一步蝕刻濃度與晶片蝕刻損耗之間的關係。

In recent years, diamond wire cutting technology has become the mainstream cutting technique for silicon solar cell wafers, replacing the traditional slurry cutting technique in the solar cell wafer cutting market. However, for diamond-wire-sawn wafers, the diamond-cutting marks left on the wafers after cutting are different from the marks left by the previous slurry cutting technique. As a result, the subsequent texturing process will differ, requiring adjustments to the existing processes to achieve the goal of reducing reflectance.
In this study, we use p-type monocrystalline silicon solar cell substrates for investigation. The experiment will focus on surface texturing of the substrates. Initially, a copper-based acid etchant, serving as a metal catalyst, is used for surface texturing to create a inverted-pyramid-like structure. In the first step of the experiment, etching will be conducted at a fixed temperature and metal concentration, with adjustments made for the concentrations of hydrofluoric acid and hydrogen peroxide as variable parameters. This study adopts a lower hydrofluoric acid concentration compared with most literature. Following the results of the first step, an alkaline solution soaking step is necessary to modify the surface morphology and achieve an improved inverted pyramid structure. Subsequently, the morphology structure will be analyzed through scanning electron microscope (SEM) imaging, and the relationship between the structure and reflectance will be observed through reflectance measurements. This experiment will also compare the reflectance measurements with commercially available wafers featuring a regular pyramid morphology structure. Additionally, the relationship between the first step etching concentration and wafer etching loss will be explored by measuring the wafer thickness.

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