本篇論文主要是探討超薄氧化鋅的研究，將氧化鋅從一般的薄膜厚度(數十到數百奈米)壓縮成一個原子層厚度，此材料在電性上會與一般薄膜厚度的氧化鋅產生極大的差異。我們期望超薄氧化鋅與其他材料形成蕭特基接面，進而組成電晶體，並且讓電晶體具有非常高的電流增益與開關特性。
本論文透過X光吸收光譜與X光螢光光譜的分析，顯示了超薄氧化鋅確實有成長在矽基板上。而在元件的製程中發現，超薄氧化鋅上熱蒸鍍金屬會導致金屬擴散，於是改用黏貼的方式製作論文中電晶體的集極與基極電極。
我們量測到元件的共射極電流增益β在BC接面逆偏0.2V且VBE為1mV的情況下，可達到57的數值，並且共基極電流增益α非常接近於1，驗證了以超薄氧化鋅當作電晶體基極的設計概念。若定義FOM為 β/V_BE V_CB，本論文能得到285000的數值，與其他篇論文比較高出不少，因此本論文製作之電晶體在低功耗與高增益上皆有非常好的表現。

This paper is mainly about the research of ultra-thin Zinc-Oxide. The thickness of bulk Zinc-Oxide is reduced from tens to hundreds of nanometers to only an atomic layer. There is great difference in electrical properties between ultra-thin Zinc-Oxide and bulk Zinc-Oxide. It was expected that the ultra-thin Zinc-Oxide may form Schottky contacts with other materials, which can be used to form a transistor, with extremely high current gain and proper switching characteristics.
The analysis of X-ray absorption spectrum and X-ray fluorescence spectrum, shows that the ultra-thin Zinc-Oxide was indeed deposited on the silicon substrate. Since thermal vapor deposition of metal on the ultra-thin Zinc-Oxide resulted in metal diffusion, through the ultra-thin Zinc-Oxide during the fabrication process, adhesion was used to fabricate the collector region and the base electrode.
When VCB was biased at 0.2V and VBE was biased at 1mV, a common emitter current gain β was measured to be 57 and a common base current gain α was measured to be very close to 1. It proves the concept of using ultra-thin Zinc-Oxide as the base of transistor. The FOM, which is defined as β/V_BE V_CB, was measured to be 285000 in this paper and it is higher than those in other researches. As a result, the transistor in this paper has great performance in both low power consumption and high current gain.

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