研究生: |
張銘佑 Chang, Ming Yo |
---|---|
論文名稱: |
利用封裝與實驗製程提升垂直有機電晶體壽命以及穩定性 Research in how to use encapsulation and experiment process to enhance lifetime and stable of the vertical organic transistor |
指導教授: |
洪勝富
Horng, Sheng Fu |
口試委員: |
孟心飛
Meng, Hsin Fei 王倫 Wang, A Long 趙宇強 Chao, Yu Chiang |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering |
論文出版年: | 2015 |
畢業學年度: | 103 |
語文別: | 中文 |
論文頁數: | 48 |
中文關鍵詞: | 空間電荷限制電晶體 、可靠度製程 、壽命 、持續偏壓效應 |
外文關鍵詞: | SCLT, reliability-processed, lifetime, bias stress effect |
相關次數: | 點閱:3 下載:0 |
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本研究團隊近幾年來極力改善空間電荷限制電晶體特性,為了將空間電荷限制電晶體驅動有機發光二極體、電子紙或其他應用將其商品化,壽命以及可靠度顯得格外重要。由於空間電荷限制電晶體未封裝下容易受到水氣影響使其電性日益降低,所以必須透過良好的封裝來維持其壽命,而為了模擬空間電荷限制電晶體商品化後的真實情況,會對元件施加一長時間的操作偏壓,並藉由量測計算臨界電壓的飄移值大小,臨界電壓的飄移值易影響所驅動的有機發光二極體、電子紙等等,利用改善製程,來使臨界電壓的飄移值降低。本論文主要探討空間電荷限制電晶體封裝後壽命,以及藉由改善製程如加入自組裝單層分子或紫外光臭氧處理探討其可靠度。
Our group has improved the property of the space-charge-limited transistor for many years. To drive the organic light-emitting device (OLED) and E-paper by SCLT and commercialize all of this application, lifetime and the stability are the main bottleneck of the development. Without being encapsulated, the electricity of the SCLT would decrease day by day because of the moisture. Therefore, maintaining the life time of the SCLT is to develop the well encapsulation. Due to simulating the reality of the commercialized product of SCLT, we will operate the device for a long time and then calculate the value of the threshold voltage which affects the SCLT driving the OLED and E-paper. Decreasing the threshold voltage, the process of the SCLT would be improved. The main ideas of this dissertation are to investigate the lifetime of SCLT after encapsulated and the stability of SCLT by adding self-assembled mono-layer or irradiating UV Ozone process which improves the fabrication process.
[1] Y. C. Chao, H. F. Meng, and S. F. Horng, Appl. Phys. Lett., 88, 223510 (2006).
[2] Y. C. Chao, H. F. Meng, S. F. Horng, and C. S. Hsu, Org. Electron 9, 310 (2008).
[3] Y. C. Chao, Y. C. Lin, M. Z. Dai, H. W. Zan, and H. F. Meng, Appl. Phys. Lett. 95, 203305 (2009).
[4] Y. C. Chao, H. K. Tsai, H. W. Zan, Y. H. Hsu, H. F. Meng, and S. F. Horng, Appl. Phys. Lett. 98, 223303 (2011).
[5] Y. C. Chao, M. C. Niu, H. W. Zan, H. F. Meng, and M. C. Ku, Org. Electron 12, 78 (2011).
[6] Y. C. Chao, M. C. Ku, W. W. Tsai, H. W. Zan, H. F. Meng, H. K. Tsai, and S. F. Horng, Appl. Phys. Lett. 97, 223307 (2010)
[7] S. Pal and A. K. Nandi, J. Appl. Polym. Sci. 101, 3811 (2006).
[8] H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P. Herwig, and D. M. de Leeuw, Nature 401, 685 (1999).
[9] M. Aryal, K. Trivedi, and W. C. Hu, Acs Nano 3, 3085 (2009).
[10] H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P. Herwig, and D. M. de Leeuw, Nature 401, 685 (1999).
[11] H. Sirringhaus, R. J. Wilson, R. H. Friend, M. Inbasekaran, W. Wu, E. P. Woo, M. Grell, and D. D. C. Bradley, Appl. Phys. Lett. 77, 406 (2000).
[12] G. Gustafsson, O. Inganas, and S. Stafstrom, Solid State Commun. 76, 203 (1990).
[13] MuktiAryal, KrutarthTrivedi, Wenchuang (Walter) Hu, “Nano-Confinement 38 Induced Chain Alignment in Ordered P3HT Nanostructures Defined by Nanoimprint Lithography”, ACS Nano, 3 (10), pp 3085–3090, (2009)
[14] H.Sirringhaus, Adv. Mater. 21, 3859 (2009).
[15] H.W. Zan and S. C. Kao, IEEE Electron Dev. Lett. 29, 155 (2008).
[16] H. W. Zan, Y. H. Hsu, H. F. Meng, C. H. Huang, Y. T. Tao, and W. W. Tsai, Appl. Phys. Lett. 101, 093307 (2012).