鈀/鍺/鈦/鉑與砷化銦鎵的歐姆介面之最佳化及材料分析

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研究生：	陳昱翔 Chen, Yu-Hsiang
論文名稱：	鈀/鍺/鈦/鉑與砷化銦鎵的歐姆介面之最佳化及材料分析 Optimization and analysis of Pd/Ge/Ti/Pt ohmic contact on n-InxGa1-xAs (x=0, 0.2 and 0.53)
指導教授：	洪銘輝 Hong, Ming-Hwei 郭瑞年 Kwo, Ray-Nien
口試委員:	黃倉秀郭治群徐嘉鴻
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2011
畢業學年度：	99
語文別：	英文
論文頁數：	82
中文關鍵詞：	歐姆介面、砷化銦鎵
外文關鍵詞：	Ohmic contact, InGaAs
相關次數：	點閱：3 下載：0
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砷化銦鎵半導體的高遷移率對於高速互補式金屬氧化物元建中是一極有潛力之通道材料,而在互補式金屬氧化物元件的製成當中,如何有效降低源極以及汲極的接觸電阻是非常關鍵的一個議題《尤其是在小尺寸的元件當中《接觸電阻對於元件效能的影響更為重大〈有鑑於此《鈀/鍺/鈦/鉑在砷化銦鎵半導體上的歐姆介面在這篇論文中《達成了對於接觸電組之最佳化以及對於歐姆介面形成做了完整的材料分析〈
經由分子束磊晶技術《不同比例的砷化銦􏰀磊晶層被成長在絕緣的砷化銦鎵基版上〈在經過鈀/鍺/鈦/鉑金屬的沈積之後《試片分別經由不同溫度以及時間的快速退火條件製成〈之後再經由傳送線理論計算出其接觸電阻對於不同退火條件之關係〈
在找到了最佳化的金屬厚度以及退火條件之後《在砷化鎵上最低的接觸電阻為 1.2×10-6 歐姆公分平方》在 0.2 比例的砷化銦鎵上則可降低至 5.4×10-7 歐姆公分平方〈而在 0.53 比例的砷化銦鎵上《甚至能將接觸電阻達到至 1.0×10-7 歐姆公分平方〈另外《X 光繞射》電子穿透顯微鏡以及能量散射光譜儀都用來分析在砷化銦􏰀上歐姆介面的形成機制〈這篇論文的結果展示了鈀/鍺/鈦 a/鉑金屬能有效的在砷化銦鎵上形成歐姆介面《並且對於未來應用在金屬氧化物場效電晶體上《提供了降低接觸電阻之明確的方法〈

InxGa1-xAs semiconductors are now potential candidates for high-speed complementary metal oxide semiconductor (CMOS) devices due to their high electron mobility. One of the key issues of fabricating high performance CMOS is to lower the contact resistance, which is the dominant component in the highly scaled devices. In this work, Pd/Ge/Ti/Pt metal system had been fabricated on n-InxGa1-xAs (x=0, 0.2, 0.53) layers for achieving low contact resistivity with planar metal-semiconductor interface.
A solid-source GaAs-based III-V molecular beam epitaxial (MBE) was used to grow GaAs, In0.2Ga0.8As and In0.53Ga0.47As epilayers. The samples were rapid thermal annealed (RTA) at various temperatures from 300°C to 400°C for 10 to 90 seconds after the deposition of Pd/Ge/Ti/Pt metals. Transmission line method (TLM) was used to extract the specific contact resistivity (ρc) and sheet resistance (Rs).
With the optimized Ge thickness and RTA condition, the lowest ρc attained on n-GaAs and n-In0.2Ga0.8As are 1.2×10-6 ohm-cm2 and 5.4×10-7 ohm-cm2 respectively. For n-In0.53Ga0.47As, ρc could even reach as low as 1×10-7 ohm-cm2. Moreover, X-ray diffraction (XRD), transmission electron microscope (TEM) and energy-dispersive X- ray spectroscopy (EDS) have also been used to analyze the mechanism of forming ohmic contacts on n-InxGa1-xAs. The results have demonstrated that the Pd/Ge/Ti/Pt metal system could to be readily applied to MOSFETs for the ohmic contact on the re- grown source/drain or ion-implanted source/drain with appropriate activation temperature.

中 文 摘 要 ................................................................................................... I Abstract ....................................................................................................II 致 謝 ........................................................................................................ III Table of Contents .................................................................................. IV Table Captions......................................................................................VII Figure Captions .................................................................................. VIII
Chapter 1 Introduction...........................................................................1 1.1 Research background ...................................................................................1 1.2 Motivation......................................................................................................3
Chapter 2 Instrumentation and Theories .............................................6
1 Molecular beam epitaxy ...............................................................................6
1.1 Multi-Chamber MBE system.............................................................6 2.1.2 Reflection High Energy Electron Diffraction21 ................................7 2.1.3 Residual Gas Analyzer .....................................................................11
2 Electrical analysis of Metal-Semiconductor contact................................13
2.1 Metal-Semiconductor contact..........................................................13 2.2.2 Contact resistance .............................................................................15 2.2.3 Transmission line model (TLM) ......................................................19
3 Etching principles of acid solutions...........................................................24
3.1 Native Oxide Removal by Using Hydrochloric Acid .....................24
3.2 Etching principles of GaAs with sulfuric acid/hydrogen peroxide/water solution .............................................................................26
4 X-ray diffraction .........................................................................................26
5 Transmission Electron Microscope (TEM) ..............................................27
6 Energy-dispersive X-ray spectroscopy (EDS) ..........................................27
7 Hall measurement ....................................................................................... 28

Chapter 3 Experimental Procedure.....................................................30 3.1 Highly Doped III-V Layer Growth Process in MBE System..................30 3.2 Ohmic Contact Metal Deposition on TLM pattern regions....................32 3.3 Measurement of Specific Contact Resistivity ...........................................34 3.4 Micro-structure Analyses...........................................................................34
4.1 X-ray Diffraction (XRD) .................................................................34
4.2 High Resolution Transmission Electron Microscope (HRTEM).35 Chapter 4 Results and Discussion........................................................36
1 The Optimization and Investigation of the Pd/Ge/Ti/Pt Metals on n- GaAs Layer.........................................................................................................36
1.1 Optimization of Contact Resistivity with Various Thickness Ratio of Pd/Ge on n-GaAs ...................................................................................36
1.1.1 Pd(30nm)/ Ge(15nm)/ Ti(30nm)/ Pt(30nm) deposited on n-GaAs..37
1.1.2 Pd(30nm)/ Ge(30nm)/ Ti(30nm)/ Pt(30nm) deposited on n-GaAs..38
1.1.3 Pd(30nm)/ Ge(60nm)/ Ti(30nm)/ Pt(30nm) deposited on n-GaAs..41
1.1.4 Pd(30nm)/ Ge(30nm) deposited on n-GaAs ....................................43
1.1.5 Comparison of specific contact resistivity with different Pd/Ge ratio and RTA conditions on n-GaAs...................................................................45
1.2 Phase Identificaiton of the Pd/Ge/Ti/Pt on n-GaAs with different RTA conditions...........................................................................................47
2 The Optimization and Investigation of the Pd/Ge/Ti/Pt Metals on n- In0.2Ga0.8As Layer ..............................................................................................50
2.1 Optimization of Contact Resistivity with Various Thickness Ratio of Pd/Ge on n-In0.2Ga0.8As.........................................................................50
2.1.1 Pd(30nm)/ Ge(15nm)/ Ti(30nm)/ Pt(30nm) deposited on n- In0.2Ga0.8As ..................................................................................................50
2.1.2 Pd(30nm)/ Ge(30nm)/ Ti(30nm)/ Pt(30nm) deposited on n- In0.2Ga0.8As ..................................................................................................52
2.1.3 Pd(30nm)/ Ge(60nm)/ Ti(30nm)/ Pt(30nm) deposited on n- In0.2Ga0.8As ..................................................................................................54
2.1.4 Pd(30nm)/ Ge(30nm) deposited on n-In0.2Ga0.8As ..........................56
...................................................................................................................... 56
2.1.5 Comparison of specific contact resistivity with different Pd/Ge ratio and RTA conditions on n-In0.2Ga0.8As.........................................................57
2.2 Strucural Investigation of the Relation between Contact Resistivity and Annealing Conditions on n-In0.2Ga0.8As ........................60
2.2.1 Phase Identificaiton of the Pd/Ge/Ti/Pt on n-In0.2Ga0.8As with different RTA conditions .............................................................................60
2.2.2 Cross-section Structural Investigation of Pd/Ge/Ti/Pt on In0.2Ga0.8As with Various RTA Conditions Using TEM .................................................63
2.3 The Migration of Germanium Atoms on In0.2Ga0.8As during Rapid Thermal Annealing.........................................................................66
3 Comparison with other results on n-GaAs with short time annealing ...68
4 The Optimization and Investigation of the Pd/Ge/Ti/Pt Metals on n- In0.53Ga0.47As Layer............................................................................................70
4.1 Optimization of Contact Resistivity with Various Thickness Ratio of Pd/Ge on n-In0.53Ga0.47As ...................................................................... 70
4.1.1 Pd(60nm)/ Ge(60nm)/ Ti(30nm)/ Pt(30nm) deposited on n- In0.53Ga0.47As ................................................................................................ 70
4.1.2 Comparison of specific contact resistivity with different Pd/Ge ratio and RTA conditions on n-In0.53Ga0.47As ......................................................71
4.2 Phase Identificaiton of the Pd/Ge/Ti/Pt on n-In0.53Ga0.47As with different RTA conditions...........................................................................73
5 Comparison with other results on n-In0.53Ga0.47As with short time annealing ............................................................................................................. 76
Chapter 5 Conclusion............................................................................78 Reference ................................................................................................. 80

                                

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