垂直式磁性隨機記憶體之熱輔助寫入｜國立清華大學博碩士論文庫

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研究生：	吳智濠
論文名稱：	垂直式磁性隨機記憶體之熱輔助寫入 Thermally-assisted writing MRAM with perpendicular magnetization
指導教授：	賴志煌
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2005
畢業學年度：	93
語文別：	中文
論文頁數：	72
中文關鍵詞：	磁性隨機記憶體
相關次數：	點閱：3 下載：0
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本論文利用稀土-過渡金屬元素的高垂直異向性特性來創造垂直式磁性隨機記憶體,所採用的結構為TbCo / Co(Fe) / Cu / Co(Fe) / TbFeCo的自旋閥結構,由於介面上的Co(Fe)與Tb(Fe)Co具有很強的交互偶合使得Co(Fe)的磁矩也垂直於膜面。首先,我們探討在介面插入Co(Fe)後的影響,接著探討此系統中特殊的反向巨磁阻現象。最後我們分別利用加熱板加熱及電流加熱兩種熱輔助方式來模擬熱輔助寫入。
論文的第二部份則是利用TbCo具有高異常霍爾效應及對溫度靈敏反應的兩個特性,來創造出新的磁性隨機記憶體。此記憶體讀取的訊號是異常霍爾電壓.而寫入訊號時,則利用熱輔助寫入的方式。

第一章    序論……………………………………………………………1
第二章     文獻回顧與原理………………………………………………3
2-1-1 磁阻簡介………………………………………………………….3
2-1-2 巨磁阻效應(Giant Magnetoresistance Effect)……………………4
2-1-3 CPP巨磁阻和CIP巨磁阻(CPP GMR and CIP GMR)…………..5
2-1-4反向巨磁阻(inverse GMR)………………………………………..7
2-2稀土-過渡金屬合金的特性………………………………………...10
2-2-1 RE-TM簡介………………………………..…………………….10
2-2-2稀土-過渡金屬……………………………………………………10
2-2-3 稀土-過渡金屬合金之成分對磁化量與矯頑場之關係………..12
2-2-4 典型稀土-過渡金屬合金之磁性質與溫度關係………………..14
2-2-5 稀土-過渡金屬合金之柯爾磁光性質…………………………..16
2-2-6 稀土-過渡金屬合金之垂直異向性……………………………..18
2-3 磁性隨機記憶體(MRAM)………………………………………...20
2-3-1 摘要……………………………………………………………...20
2-3-2  MRAM的發展………………………………………………....20
2-3-3  MRAM的基本原理……………………………………………21
2-3-4  MRAM寫入與讀取機制………………………………………23
2-3-5 垂直式磁性記憶體(MRAM with perpendicular magnetization).24
2-3-6 熱輔助寫入(thermally-assisted writing).......................................27
第三章  實驗設備與分析儀器………………………………………..30
3-1-1 溅鍍原理簡述…………………………………………………...30
3-1-2 濺鍍系統(sputtering system)…………………………………….32
3-1-3 稀土-過渡金屬合金薄膜的製備………………………………..33
3-2-1 α-step厚度分析..............................................................................34
3-2-2 原子力顯微鏡(AFM)厚度分析………………………………....34
3-3 磁光柯爾效應分析儀 (Kerr-loop Tracer)………………………...36
3-4 四點探針之磁阻量測……………………………………………...39
第四章 實驗結果與討論………………………………………………41
4.1 TbCo/Co(Fe)/Cu/Co(Fe)/TbFeCo 磁性多層膜之巨磁阻現象(GMR)與熱輔助寫入的探討……………………………………………….….41
4-1-1 垂直巨磁阻效應 (Giant Magnetoresistance with perpendicular magnetization)…………………………………………………………..42
4-1-2 熱輔助寫入 (Thermally assisted-writing)……………………...46
4-2 介面Cu的厚度與磁阻大小的關係………………………………52
4-3 介面過渡元素磁性層的厚度與磁阻大小的關係………………...53
4-4 Current writing of MRAM with perpendicular magnetization……..59
4-5 稀土-過渡金屬合金的異常霍爾效應及其結合熱寫應用……….61
4-5-1 淨磁矩(Ms)的提升………………………………………………62
4-5-2 稀土-過渡金屬合金的異常霍爾效應之應用…………………..65
參考文獻(Reference)…………………………………………………...69

                                

1. R. Hunt, IEEE Trans. Magn. MAG-7, 150 (1971)
2. M. N. Baibich, J. M. Broto, A. Fert, F. Nguyen van Dau, F. Petroff, P. Etienne, G. Creuzet, A. Friederich and J. Chazelas, Phys. Rev. Lett. 61, 2472 (1988)
3. R. Coehoorn, Phys. Rev. B 44, 9331 (1991)
4. P. Bruno and C. Chappert, Phys. Rev. Lett. 67, 1602 (1991)
5. A. Fert and I. A. Campbell, J. Phys. F: Metal Phys. 6, 849 (1976)
6. C. Bellouard, H. D. Rapp, B. George, S. Mangin, and G. Marchal, Phys. Rev. B 53, 5082 (1996)
7. F. E. Stanley, M. Perez, C. H. Marrows, S. Langridge, and B. J. Hickey, Europhys. Lett. 49, 528 (2000)
8. E. P. Wohlfarth, J. Phys. F, 9, L123 (1979)
9. R. L. Comstock,” Introduction to magnetism and magnetic recording “ Wiley-Interscience, John Wiley & Sons Inc., 1999, pp 75-76 (ISBN 0-471-31714-4)
10. R. J. Gambino, and T. Suzuki, “ Magneto-optical recording materials” IEEE Press, New York, 2000 (ISBN 0-780-31009-8)
11. F. A. Doljck and R. W. Hoffman, Thin Solid Film, 12, 71 (1972)
12. Hong Fu, Masud Mansuripur, and Pierre Meystre, Phys. Rev. Lett. 66, 25 (1991)
13. M.S.S. Brooks, L. Nordstroem, and B. Johanaaon, Physica B: Condensed Matter. 177, 95 (1991)
14. Y. Suzuki, J. Haimovich, and T. Egami, Phys. Rev. B 35, 2162 (1987)
15. G. S. Cargill, III and T. Mizogouchi, J. Appl. Phys. 49, 1753 (1978)
16. L. Nẽel, J. Phys. Radium 15, 225 (1954)
17. T. Egami, C. D. Graham, Jr., W. Dmowski, P. Zhou, and P. J. Flanders. IEEE. Trans. Magn. MAG-23, 2269 (1987)
18. Y. Suzuki, S. Takayama, F. Kirino, and N. Ohta, IEEE Trans. Magn. MAG-23, 2275 (1987)
19. M. Chikazumi, “ Physics of magnetism”, New York: John Wiley (1964)
20. S. Tsunashima, H. Takagi, K. Kamegki, T. Fujii, and S. Uchiyama, IEEE Trans. Magn. MAG-14, 844 (1987)
21. “ Introduction to magnetic materials ”,B. D. Cullity (1972)
22. Shih-Cheng N. Cheng and Mark H. Kryder, J. Appl. Phys. 69, 7202 (1991)
23. E. Girgis, J. Scheltem, J. Sci., J. Janesky, S. Tehrani, and H. Goronkin, Appl. Phys. Lett 76, 3780 (2000)
24. N. Nishimura, T. Hirai, A. Koganei, T. Ikeda, K. Okano, Y. Sekiguchi, and Y. Osada, J. Appl. Phys. 91, 5246 (2002)
25. Chao-Cheng Lin, Chih-Huang Lai, D. H. Wei, Y. J. Hsu, and Han-Ping D. Shieh, J. Appl. Phys. 95, 6846 (2004)
26. J. Sort, B. Rodmacq, S. Auffret, and B. Dieny, Appl. Phys. Lett. 83, 1800 (2003)
27. F. Garcia, F. Fettar, S. Auffret, B. Rodmacq, and B. Dieny, J. Appl. Phys. 93, 8397 (2003)
28. United States Patent 6,724,674 David W. Abraham (US) et al. (IBM, Inc.) Apr. 20, 2004
29. United States Patent 2004/0095801 Barry C. Stipe (US) et al. Apr. 20, 2004
30. R. S. Beech, J. A. Anderson, A. V. Pohm, and J. M. Doughton, J. Appl. Phys. 87, 6403 (2000)
31. Jianguo Wang, and P. P. Freitas, Appl. Phys. Lett 84, 945 (2004)
32. Jianguo Wang, and P. P. Freitas, IEEE Trans. Magn. MAG-40, 2622 (2004)
33. I. L. Prejbeanu, W. Kula, K. Ounadjela, R. C. Sousa, O. Redon, B. Dieny, and J. –P. Nozieres, IEEE Trans. Magn. MAG-40, 2625 (2004)
34. J. L. Vossen and W. Kern, Thin Film Processes, Academic Press, New York (1978)
35. Dieter K. Schroder, “Semiconductor Material and Device Characterization”, Wiley, pp1-9, 1990
36. G. Binasch, P. Grunberg, F. Saurenbach, W. Zinn, Phys. Rev. B 39, 4828 (1989)
37. N. Persat, A. Dinia, J. P. Jay, C. Meny, P. Panissod, J. Magn. Magn. Mater, 164, 37 (1996)
38. F. Petroff, A. Barthelemy, D. H. Mosca, D. K. Lottis, and A. Fert, Phys. Rev. B , 44, 5355 (1996)
39. L. B. Steren, A. Barthelemy, J. L. Duvail, A. Fert, R. Morel, and F. Petroff, Phys. Rev. B, 51, 292 (1995)
40. D. H. Mosca, F. Petroff, A. Fert, P. A. Schroeder, W. P. pratt, and R. Loloee, J. Mang. Mang. Mater, 94, 1(1991)
41. S. P. Parkin, N. More, and K. P. Roche, Phys. Rev. Lett. 64, 2304 (1990)
42. M. T. Johnoson, S. T. Purcell, N. W. E. Mcgee, R. Coehoon, Phys. Rev. Letter. 68, 2688 (1992)
43. T. R. McGuire, R. J. Gambino, and R. C. Taylor, J. Appl. Phys. 48. 2965 (1977)
44. Wei Ye, Philip Scala, Ko-Wei, and R. J. Gambino, IEEE Trans. Magn. MAG-36, 3673 (2000)
45. M. Manivel Raja, K. W. Lin and R. J. Gambino, J. Appl. Phys. 91. 7439 (2002)
46. T. W. Kim and R. J. Gambino, J. Appl. Phys. 87. 1869 (2000)

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