本實驗是利用射頻磁控濺鍍法製作PZT(10/90)/PZT(90/10)成份互補多層膜於白金基板(Pt/Ti/SiO2/Si)上。研究重點包括單層膜鉛過量和功率的選取，以及等比例與非等比例成份互補的PZT多層膜對晶體結構、微觀結構、介電性質、鐵電特性、疲勞特性以及漏電流的影響。
結果顯示富鈦的PZT(10/90)單層膜，在鉛過量5 ~ 10 %、RF功率50 W ~ 60 W的條件下，可以在600 oC完全形成單一perovskite相。富鋯的PZT(90/10) 單層膜，在鉛過量10 ~ 15 %、RF功率50 W的條件下，可以在600 oC完全形成單一perovskite相，且其微結構較為緻密，具有最佳的鐵電性。非等比例成份互補多層膜在富鋯PZT(90/10)單層膜厚度與富鈦PZT(10/90)單層膜厚度相等時，有最大的介電常數318、最小的矯頑場62 kV/cm，以及最佳的耐疲勞性質。等比例成份互補多層膜方面，成相溫度較低的富鈦 PZT(10/90) 可以幫助富鋯 PZT(90/10)成相。隨著層數增加：晶粒尺寸會下降，至PZT-12時達到最小約為 10 nm；表面微裂隙所佔的比例減少，PZT-24表面顯得最為緻密；介電常數會上升，至PZT-60達最大值472；殘存極化量會上升至PZT-24的23.6 μC/cm2達最大值，矯頑場會下降至PZT-24的44.3 kV/cm為最小；疲勞性質能有所改善，PZT-8在反轉次數為109次下，仍能維持在88%；漏電流性質以PZT-6在施加電場將近200 kV/cm時，仍維持10□7A/cm2左右的電流密度為最佳。

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