非揮發性記憶體(nonvolatile memory；NVM)在元件尺寸持續微縮下的目的為高密度記憶單元、低功率損耗、快速讀寫操作、以及良好的可靠度(reliability)。傳統浮動閘極(floating gate)記憶體在操作過程中如果穿隧氧化層產生漏電路徑會造成所有儲存電荷流失回到矽基板，所以在資料保存時間(retention)和操作耐久性(endurance)的考量下，很難去微縮穿隧氧化層的厚度。我們利用GeO2以及Ge3N4本身含有很多陷阱(trap)，可當作彼此分離的儲存點，改善小尺寸記憶體元件多次操作下的資料儲存能力。
在本論文中，我們用一個簡單的製程方法來形成鍺化物如：GeO2以及Ge3N4，探討其作為儲存材料的特性。在SONOS記憶體元件中以Si3N4作為電荷儲存層，GeO2的傳導帶(conduction band)比起Si3N4的傳導帶低約(~0.7 ev)理論上是可以有效地改善資料儲存能力；若以Ge3N4作為電荷儲存層材料，Ge3N4的傳導帶比起Si3N4的傳導帶低約(~0.7 ev)理論上是可以有效地改善資料儲存能力，而且Ge3N4的介電係數(~9.6)比起Si3N4(~7.4)來得高，可讓施加的閘極電壓更有效的落在穿隧氧化層，以提高元件操作效率。最後利用製作完成的電容元件，做以下幾項電性量測包含：電容量測、資料保存時間量測、寫入/抹除速度量測、操作耐久性量測等。藉由以上之量測，我們可以清楚地知道我們製作元件之特性，並得知影響元件特性之原因與元件結構之關鍵點。

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