本論文一開始以光微腔體(optical micro-cavity)與量子點(quantum dots)的結合為主要起頭，由二氧化矽(SiO2)所製作出來的光微腔體扮演光學共振腔(optical resonator)的角色，而硒化鎘(CdSe)量子點(quantum dots)則為所用的光源，希望可以藉由結合兩者，進而發展成可以應用的光學元件。因此本論文將會提及共振腔的光學性質、光微腔體製程以及量子點的介紹，至於結合化學方法，是利用化學表面改質的方法將光微腔體和硒化鎘量子點結合，所以也將敘述其化學的方法與原理。

在量子點和光微腔體的結合之後，本文亦結合分子束磊晶(molecular beam epitaxy)所成長的三族氮化合物(III-N)半導體薄膜和二氧化矽光微腔體，將本實驗室所生長的材料取代容易衰退的硒化鎘(CdSe)量子點，由於激發光的能量會使硒化鎘光漂白(photo-bleaching)，進而收到的光致激發螢光漸漸變弱；因此，以氮化鎵(GaN)、氮化銦(InN)或氮化銦鎵(InGaN)薄膜等等由分子束磊晶生長的發光薄膜取代硒化鎘，本實驗選擇綠光(波長為500奈米左右)的氮化銦鎵，作進一步光微腔體和三族氮化合物半導體發光層的製程以及光性探討。

除了主軸的實驗之外，本論文也會將近代光微腔體的發展以及其應用稍做介紹，也會結合一小部分光學理論的說明，因此將會在此論文中討論品質因子(Q-factor)、普塞爾因子(Purcell factor)、耳語廊模態(WGMs, whispering gallery modes)等等概念。

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