機械耦合式CMOS-MEMS濾波器之設計與特性探討｜國立清華大學博碩士論文庫

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研究生：	陳昭瑜 Chen, Chao-Yu
論文名稱：	機械耦合式CMOS-MEMS濾波器之設計與特性探討 Design and Characterization of Mechanically-Coupled CMOS-MEMS Filters
指導教授：	李昇憲
口試委員:	呂良鴻鄭裕庭盧向成
學位類別：	碩士 Master
系所名稱：	工學院 - 奈米工程與微系統研究所 Institute of NanoEngineering and MicroSystems
論文出版年：	2013
畢業學年度：	101
語文別：	中文
論文頁數：	90
中文關鍵詞：	金氧半導體微機電系統、機械耦合、電容式元件、微機械共振器、微機械濾波器、窄頻應用、阻抗匹配、雙埠量測、差分驅動
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本研究將針對機械耦合式CMOS-MEMS濾波器進行設計及特性探討。為了於頻譜上實現訊號濾波功能，文中所使用的共振器皆以雙端自由樑來實現，並以特殊設計之機械耦合樑，將一對共振器單元組成雙自由度系統，其中耦合樑之幾何形狀與座落位置將決定濾波通帶之頻寬大小。
建立在上述基礎下，我們利用CMOS結構中現有之金屬堆疊層進行濾波器製作，過程中為了使電容式元件具備較低的運動阻抗值，將使用陣列式結構設計以及間隙縮減技術，藉此獲得大範圍之感測面積與次微米換能間隙。量測上將使用De-Embedding技術去除外界寄生效應的干擾，並搭配適當端點阻抗，使平坦之濾波通帶順利於頻譜上實現。值得一提的是，於量測過程中，亦發現使用複合材料將有效提升系統共振頻之溫度穩定度。
而文中亦提出利用氧化物複合結構所開發的濾波元件，相較於上述之金屬複合結構，雖說元件後製作過程相對複雜，但理想上可獲得較為優異之機電轉換係數與品質因數表現。此外，鑑於傳統雙埠量測架設將為元件帶來可觀的寄生效應，因此，本研究使用差分驅動架構進行濾波元件的操作，在不使用De-Embedding技巧下，成功移除雜散電容對濾波頻帶所帶來的影響。
本文採用標準CMOS製程來實現中頻機械耦合式帶通濾波器，希冀能藉由其高度電路整合特性，進一步改善傳統應用於無線收發系統內之離散式或高功率消耗之濾波元件。

This work reports on the design and characterization of a mechanically-coupled CMOS-MEMS filter centered at several MHz with a narrow bandwidth and reasonable insertion loss after filter termination performed in a 4-port network analyzer. To implement a bandpass filter, the proposed filter structure produces two physical resonance modes, therefore forming a filter passband with a desired bandwidth by the use of the mechanical coupler at proper coupling locations.
By the use of a conventional filter design, the metal stacking layers in a foundry-oriented CMOS platform were used to fabricate the device structures, making great progress aligned with existing fabrication lines. To further reduce the motional impedance, the high-velocity coupled array and gap-reduction mechanism were adopted to create larger transduction areas and tiny gap spacing for capacitive transducers, respectively. However, due to the existence of undesired parasitics from a typical two-port configuration, the resonance response would be dwarfed and masked by the background feedthrough floor. Furthermore, the matching condition is also limited by shunt capacitance at the I/O ports for filter transmission, that significantly barricades the proper filter termination. To solve this issue, a pure motional response of the proposed filter can be extracted once the de-embedding scheme is carried out.
To attain the lower material loss, the silicon dioxide structure was developed in this work as well. Ideally, the SiO2 can provide better electromechanical coupling and higher quality factor as compared with the metal stacking counterparts. Based on the electrical isolation of the oxide structure, the filter devices can be operated in differential configuration via the balun function on the network analyzer. With that, the feedthrough parasitic can be evidently alleviated without any post-data processing, thus creating 30dB noise-floor improvement in filter performance.

目錄
第一章 前言    1
1-1 研究動機    1
1-2 文獻回顧    5
1-3 文章架構    9
第二章 理論分析及元件模擬    11
2-1    理論模型的建立    11
2-1-1 機械系統    12
2-1-2 等效電路    13
2-1-3 雙端自由樑 (free-free beam) 共振器    16
2-2 機械濾波器模型    21
2-2-1 機械耦合樑模型    22
2-2-2 Termination考量    27
第三章 金屬複合結構    30
3-1元件設計與模擬    31
3-1-1 增加感應面積    32
3-1-2 縮減運動間隙    34
3-1-3 參數設計及模擬    36
3-2 元件製程與製作結果    38
3-2-1 CMOS-MEMS後製程    39
3-2-2製程結果檢視    41
3-3 量測設置及結果    44
3-3-1 元件寄生效應去除(De-Embedding)技術    44
3-3-2 共振器量測    46
3-3-3 溫度特性量測    49
3-3-4 濾波器量測    51
第四章 氧化物複合結構    60
4-1元件設計及模擬    61
4-2元件製程與製作結果    65
4-2-1 CMOS-MEMS後製程    65
4-2-2製程結果檢視    69
4-3 量測設置及結果    71
4-3-1 濾波器雙埠量測    72
4-3-2差分驅動式濾波器量測    77
第五章 結論與未來研究    82
5-1 結論    82
5-2 未來研究    84
第六章 參考文獻    86

圖目錄
Figure 1.1: 超外插(Superheterodyne)接收器架構示意圖    2
Figure 1.2: 直接降頻(Direct-Conversion)收發器架構示意圖    3
Figure 1.3: Low-IF接收器架構示意圖    4
Figure 1.4: Avago Tx/Rx 雙工器系統    7
Figure 1.5: CMOS-MEMS濾波器相關範例    8
Figure 2.1: 樑型共振元件及其二階系統等效模型    11
Figure 2.2: 電容式共振元件模型及其驅動方式    12
Figure 2.3: 自由樑截面示意圖    16
Figure 2.4: 共振器工作頻率藉由直流偏壓調變    20
Figure 2.5: 計入寄生效應之共振器等效電路    20
Figure 2.6: 雜散電容對於頻率響應之影響    20
Figure 2.7: 濾波器之機械模型與其頻率響應    21
Figure 2.8: 機械耦合樑示意圖及其T-shaped等效模型    22
Figure 2.9: 濾波器等效電路模型    25
Figure 2.10: 耦合樑長度與剛性之對應關係(Al, ws=hs=1um, fo=8MHz)    26
Figure 2.11: 耦合樑長度與頻寬之對應關係(Al, ws=hs=1um, fo=8MHz)    26
Figure 2.12: 濾波器Termination過程(CP = 0pF)    29
Figure 2.13: 濾波器Termination過程(CP = 1pF)    29
Figure 3.1: 金屬複合結構之濾波器元件示意圖    32
Figure 3.2: CMOS-MEMS自由樑濾波器之有限元素模態模擬    32
Figure 3.3: 陣列式設計示意圖    34
Figure 3.4: 吸附效應(Pull-In)示意圖    35
Figure 3.5: 基於金屬複合結構之濾波器響應模擬    36
Figure 3.6: TSMC 0.35um CMOS 2P4M 標準製程剖面圖    39
Figure 3.7: CMOS-MEMS元件後製作過程之前後比較    40
Figure 3.8: 雙端自由樑陣列式共振器之SEM全景圖    42
Figure 3.9: Pull-in外框與Meander Spring之SEM放大圖    42
Figure 3.10: 雙端自由樑陣列式濾波器之SEM全景圖    43
Figure 3.11: 機械耦合樑(Coupler) 之SEM放大圖    43
Figure 3.12: 共振器(a)開啟與(b)關閉之等效電路模型    46
Figure 3.13: 陣列式共振器單埠(One-Port)量測架設圖    47
Figure 3.14: 自由樑陣列式共振器之量測結果    48
Figure 3.15: 對應不同元件材料之TCf量測結果    50
Figure 3.16: 對應不同陣列數之TCf量測結果    51
Figure 3.17: 陣列式濾波器雙埠(Two-Port)量測架設圖    52
Figure 3.18: 陣列式濾波器雙埠(two-port)架構量測結果    52
Figure 3.19: 濾波器頻寬調變能力    53
Figure 3.20: De-Embedding與Termination技術示意圖    56
Figure 3.21: 濾波頻帶使用De-Embedding技術之響應結果    56
Figure 3.22: 濾波頻帶進行阻抗匹配後之響應結果    57
Figure 4.1: 基於蝕刻Metal1所達成之等效運動間隙    61
Figure 4.2: 基於蝕刻Poly2所達成之等效運動間隙    61
Figure 4.3: 氧化物複合結構之濾波器元件示意圖    63
Figure 4.4: 基於氧化物複合結構之濾波器響應模擬    63
Figure 4.5: 以Metal1空間作為運動間隙之元件後製作過程    66
Figure 4.6: 以Poly2空間作為運動間隙之元件後製作過程    68
Figure 4.7: 雙端自由樑陣列式濾波器之SEM全景圖    69
Figure 4.8: 機械耦合樑(Coupler) 之SEM放大圖    70
Figure 4.9: 以Metal1空間作為運動間隙之結構剖面    70
Figure 4.10: 以Poly2空間作為運動間隙之結構剖面    71
Figure 4.11: 陣列式濾波器雙埠(Two-Port) 量測架構    72
Figure 4.12: 濾波器量測結果─以M1空間作為感測間隙    74
Figure 4.13: 濾波器量測結果─以Poly2空間作為感測間隙    75
Figure 4.14: 濾波頻帶進行阻抗匹配後之響應結果    75
Figure 4.15: 陣列式濾波器差分驅動式量測架構    78
Figure 4.16: 濾波元件於差動與雙埠量測架構之響應比較    79
Figure 4.17: 濾波元件於差動架構下之阻抗匹配過程    80
Figure 4.18: 濾波頻帶進行阻抗匹配後之響應結果    80
 
表目錄
Table 1.1: 中頻帶通濾波器規格表    4
Table 3.1: 單石式整合製程比較表    30
Table 3.2: 基於金屬堆疊之陣列式共振器設計參數    37
Table 3.3: 基於金屬堆疊之陣列式共振器規格    58
Table 3.4: 基於金屬堆疊之陣列式濾波器規格    59
Table 4.1: 基於氧化物複合材料之陣列式濾波器設計參數    64
Table 4.2: 雙埠架構下氧化物複合材料之陣列式濾波器規格    76
Table 4.3: 差動架構下氧化物複合材料之陣列式濾波器規格    81
Table 5.1: CMOS-MEMS濾波器比較    85
Table 5.2: 機械與電路式濾波器比較    85





                                

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