3D IC矽穿孔(Through Silicon Via, TSV)封裝技術是被看好為下一世代的封裝主流，有別於傳統的平面封裝方式，3D IC是將導線經由矽穿孔(TSV)直接穿過晶片與下層接點導通，使得原本在平面封裝必須要走的路徑，改成立體堆疊的封裝方式，便可以從垂直方向較短的路徑做傳輸，以提升晶片效能並降低晶片功率損耗。
TSV為3D IC技術的關鍵製程，並且其幾何參數為檢測的重點，由於光學式檢測有非破壞、且易於與其他系統整合的優點，在本論文中我們使用架構簡單、成本低的光譜式反射儀(spectroscopic reflectometry)，針對小孔徑、高密度的TSV陣列做深度檢測研究，開發了反射儀除了量測膜厚的另一項應用。
從實驗量到的反射光譜訊號，我們利用濾波器分離出訊號的高頻分量以及低頻分量，從低頻分量我們可以從理論反射光譜擬合出氧化層遮罩的厚度，從高頻分量我們使用快速離散傅立葉轉換演算法(FFT)，解出TSV的深度；這裡我們避開了運算量大的嚴格耦合波理論RCWA以及有限時域差分法FDTD，從側向干涉理論(lateral interference)以及薄膜理論(thin-film theory)建立我們的理論模型計算模擬反射光譜，從反射光譜我們可以進一步獲得準確的TSV幾何參數。
除了深度檢測，我們也提出橢球模型(Oblate spheroid model)描述TSV的底部形貌，從CCD的距離解析能力以及入射光的有效反射面積，我們可以得到橢球的短軸，以一個扁橢球將TSV的底部形貌描述出來。

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