本研究以氣相沈積系統來製備半導體與金屬材料之多種奈米結構，其中包含(CdS)ZnS核殼粒子薄膜、CdS奈米線、同軸核殼CdS-ZnS奈米線、三元Cd1-xZnxS合金奈米線、Sn奈米線、Sn奈米方塊、Sn奈米碟片與Sn奈米粒子等。同時研究與討論這些材料於奈米尺度、特殊結構與複合組成下所展現之相關性質。藉由同時導入兩種具反應性差異之單源先驅物(single-source precursors)於有機金屬氣相沈積系統(metal-organic chemical vapor deposition, MOCVD)中，成功地於單一步驟下製備出(CdS)ZnS之(核)殼奈米粒子薄膜，殼層之ZnS所具有的表面去活化(surface passivation)作用可大幅改善核心CdS之螢光量子產率(quantum yields)。當添加硝酸銀於成長CdS之MOCVD系統中時，添加物的導入能夠有效地增加CdS之整體沈積速率與其螢光量子產率，而所沈積之CdS其表面型態與結構亦會有所改變。藉由蒸氣-液滴-固體(vapor-liquid-solid, VLS)之成長機制，於MOCVD系統中成功地於低沈積溫度下製備出CdS之一維奈米線，CdS奈米線之螢光量子產率會隨著奈米線長度的變長而降低，而當奈米線直徑縮小時其量子產率則有升高的現象；此外，於CdS之一維奈米結構之頂端區域，首度發現由CdS與觸媒金屬形成之固溶體(solid solution)所造成的陡峭螢光發光波段。於同時導入具有反應性差異之單源先驅物於MOCVD系統中，經由VLS之成長機制於單一步驟中製備出同軸核殼之CdS-ZnS奈米線，由殼層ZnS所帶來之表面去活化作用可以有效地提升CdS奈米線之螢光量子產率；經由適當地調控MOCVD之反應條件，成功地於單一步驟下合成出三元合金Cd1-xZnxS奈米線，合金奈米線展現出不同於CdS與ZnS所具有之光學性質。最後，於無觸媒與無模版輔助之氣相沈積系統中，同時製備出Sn之多種奈米結構，包括奈米線、奈米方塊、奈米碟片與奈米粒子薄膜等；其中，三種具非等向形狀之結構(奈米線、奈米方塊與奈米碟片)所展現的超導相之工作磁場範圍，相較於Sn之塊材與奈米粒子，有著非常顯著之增加。這些Sn的沈積物於結構上之多元性則源自於Sn晶體中各個晶面間於成長速率上的相互競爭所致。

The present research focuses on the synthesis of semiconductor and metal nanomaterials in a variety of structures via the gas-phase based deposition processes. These materials included (CdS)ZnS core-shell particle films, CdS nanowires, coaxial core-shell CdS-ZnS nanowires, ternary Cd1-xZnxS alloy nanowires, Sn nanowires, Sn nanosquares, Sn nanodisks, and Sn nanoparticles. The relevant properties of the synthesized nano-sized materials with different structures and compositions were also investigated and discussed. By using two co-fed single source precursors of sufficient reactivity difference, we successfully prepared the core-shell (CdS)ZnS particle films with a one-step MOCVD process. The photoluminescence (PL) quantum yield enhancement achieved by the effective passivation of CdS core by ZnS shell was observed. An additive, silver nitrate (AgNO3), was used to prepare nanostructured films of CdS via a MOCVD process. The effect of AgNO3 addition in enhancing the deposition rate and PL efficiency of CdS deposit was demonstrated. It was also observed that morphology change can be induced through additive addition. We successfully developed a low-temperature VLS process for preparation of one-dimensional (1-D) nanostructure of CdS. The PL quantum yield of CdS nanowires was found to decrease with increasing wire length, but to increase with decreasing wire diameter. Besides, a narrow PL emission peak resulting from the formation of CdS-catalyst metal solid solution at the tip region of CdS nanostructures was observed. By co-feeding two single source precursors of sufficient reactivity difference, we successfully prepared coaxial CdS-ZnS nanowires with a one-step MOCVD process through the VLS growth mechanism. The PL quantum yield enhancement achieved by the effective passivation of CdS by ZnS was also observed in 1-D coaxial nanostructures. By appropriately adjusting the reaction conditions in the one-step MOCVD process, ternary Cd1-xZnxS alloy nanowires were successfully synthesized. Different optical properties from those of CdS and ZnS were observed in Cd1-xZnxS nanowires. A non-catalytic and template-free vapor transport process was developed to prepare various nanostructures of Sn, including nanowires, nanosquares, and nanodisks, and nanoparticles, in a single run of operation. The three anisotropically shaped nanostructures (nanowires, nanosquares, and nanodisks) showed a significant enhancement in working magnetic field ranges for superconductivity as compared to those of bulk Sn and the Sn nanoparticles. The formation of such a rich morphology may be attributed to the competition in growth rate among different crystallographic planes of Sn.

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