本篇論文中，使用高密度電將氣象沉積系統沉積N-type多晶矽薄膜。並藉由霍爾量測、四點探針量測、 X射線繞射光譜儀、及光學顯微鏡做薄膜特性之量測分析。
接著，將N-type多晶矽薄膜沉積於由中興大學先進光電實驗室所制備的ITO/非晶矽試片上，以製備非晶矽/多晶矽異質接面薄膜式太陽能電池。發現非晶矽/多晶矽異質接面之結構可得到高於一般多晶矽同質接面薄膜太陽能電池之開路電壓(Voc)，然而由於低品質多晶矽薄膜所影響，使得在短路電流(Jsc)及填充因子(FF)方面皆較一般值低。更藉由製備不同結構之非晶矽/多晶矽異質接面薄膜式太陽能電池的實驗結果及模擬結果之比較，發現不同於一般情況，P-I-N 結構之電池反而比P-I-N-N結構具有較好的I-V特性。

Abstract
In this thesis, the N-doped silicon films were deposited by High Density Plasma Chemical Vapor Deposition (HDPCVD) system. Then we used hall measurement, four point probe, XRD, and microscope to do film characteristic analysis.
And then deposit N-doped poly-Si film on the ITO-glass/a-Si sample prepared by Advanced Optoelectronic Lab of NCHU to fabricate a-Si/poly-Si thin film solar cell. Found that poly-Si layers combined with a-Si layers would enhance open circuit voltage (Voc) , but for low quality of poly-Si film, the short circuit current( Jsc) and fill factor (FF) are quit low than normal. And by comparison experiment and simulation results of different structure of a-Si/poly-Si thin film solar cells, we found for case P-I-N shown the better performance than P-I-N-N case.

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