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研究生: 李冠鋒
Kuan-Feng Lee
論文名稱: 微米級尺寸縮小化氮化鎵發光二極體製作與分析
Fabrication and analysis of GaN micro LED
指導教授: 黃惠良
Huey-Liang Hwang
口試委員:
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 電子工程研究所
Institute of Electronics Engineering
論文出版年: 2005
畢業學年度: 93
語文別: 英文
論文頁數: 56
中文關鍵詞: 微米級氮化鎵發光二極體
外文關鍵詞: micro, GaN, LED
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  • 氮化鎵系列的發光二極體由於磊晶技術的突破,且因為其寬能隙特性以及可改變鋁、銦與鎵成分比例去改變其能隙寬,成為紫外光到綠光發光二極體的主要材料。近來以藍寶石作為基板的藍光發光二極體更因為效率的提升,加上配合黃色磷粉的使用,成功製造出白色發光二極體,雖然演色性、效率及價錢還不能拿來跟螢光燈作比較,但假以時日,若能突破其物理極限以及增加其光取出效率與內部輛子效率,要取代螢光燈成為日常照明似乎不是一件不可能的事。
    為了增加氮化鎵系列的發光二極體電流使用效率,改善用藍寶石作為基板的發光二極體所遭遇的電流擁擠的問題,我們利用傳統黃光微影製程的技術縮小發光二極體的有效發光區域,將原本300微米平方的發光二極體縮小到15微米平方到3微米平方的等級,完成微米級發光二極體陣列的製作,利用多探針奈米電性量測系統與微米級光激發光系統研究當尺寸縮小時,微米級發光二極體的電學與光學特性。觀察出在尺寸相同但是距離N-type接點不同,以及尺寸不同,但是距離N-type接點相同的情況下,研究影響單顆微米級發光二極體的串聯電阻的因素。另外再研究其光學特性,研究是否有干涉產生的光學共振現象,以及發光波長是否會因為尺寸縮小到微米級而產生偏移的情形。


    Because of the breakthrough of epitaxy of GaN based LEDs, and due to it`s high
    band gap characteristics and variation by changing the concentration of Al, In and Ga, it becomes the most popular material for UV to green light LEDs. Recently, the efficiency of blue LEDs with sapphire as substrate has been great improved, combining with yellow phosphor, white light LEDs was successfully fabricated in this way. Although the color rendering, total efficiency and price of the white light LEDs still can not have the competition with that of fluorescent light, but one day if we break the physical limitation of GaN based LEDs and enhance it`s light extraction and internal quantum efficiency, general solid state lighting is not an impossible mission for us.
    In order to enhance the current usage efficiency of GaN based LEDs, and solve the problem of current crowding effect in blue LEDs with sapphire as substrate, we reduced the dimension of effective lighting area of LEDs from 15um to 3um square by traditional photo lithography method, finishing the micro LEDs array fabrication. Multi-Probe Nano-Electronics Measurement System and micro PL system are used to analyze the electrical and optical properties of individual micro LED. To analyze the electrical properties, we set the distance is the same from the n-type and p-type contact within the same dimension, and the other case is the same distance but different dimensions, therefore, we can understand what is the main point of the series resistance within individual micro LED. Besides we can analyze it`s micro PL measurement result and wish to observe whether it has optical mode within the structure or wave length shift as the size variation.

    Contents Chinese abstract……………………………………………...1 English abstract………………………………………………2 Acknowledgement……………………………………………3 Contents………………………………………………………4 Chap. 1 Introduction…………………………………………5 Chap. 2 Mechanism………………………………………….17 Chap. 3 Experiment apparatus, process and measurement30 Chap. 4 Results and discussion……………………………..40 Chap. 5 Conclusions……………...………………………….55

    Chap1 Reference
    [1]N. Holonyak, Jr. and S. F. Bevaqua, Appl. Phys. Lett. 1, 82(1962)
    [2]R. Haitz, private communication.
    [3]H. Amano, N, Sawaki and I. Akasaki, Appl. Phys. Lett. 48 (5)(1986)
    [4]S. Nakamura, Jap. J. Appl. Phys. 30, L1705 (1991)
    [5]S. Nakamura et al. Jpn. J. Appl .Phys. 30, L1708 (1991)
    [6] H. Amano, I. Akasaki : Oyo, buturi 60, 1991 (in Japanese)
    [7] S. Nakamura,Takashi Mukai, and Masayuki Senoh,Appl. Phys. Lett. 64 (13),1994
    [8] S. Nakamura, T.Mukai, J.J.A.P, 34,L1332,1995
    [9] S.Nakamura, Takashi Mukai, and Masayuki Senoh,J. Appl. Phys. 76 (12),1994
    [10] S. Nakamura, Masayuki Senoh,J. Appl. Phys. 34,1995
    [11] M. Koike, S. Yamasaki, Appl. Phys. Lett. 68 (10),1996
    [12] J. J. Wierer, D. A. Steigerwald, Appl. Phys. Lett.78, 2001
    [13] J.M. Hwang, K.Y. Ho, Z.H. Hwang, Superlattices and Microstructures 35 (2004)
    [14] R.A. Mair, K.C. Zeng, Appl. Phys. Lett. 71 (20), 1997
    [15] S.X. Jin, J. Li, Appl Phys.Lett. 76(5) 2000
    [16] H.W. Choi, M.D. Dawson, Appl Phys.Lett. 83(22), 2003
    [17] H.W. Choi, M.D. Dawson, Appl Phys.Lett. 86, 2005
    [18] N. Narendran*, Y. Gu, Journal of Crystal Growth 268 (2004)
    [19] W. S. Wong and T. Sands,Appl. Phys. Lett., Vol. 75, No. 10,1999
    [20] Maxim SHATALOV, Grigory SIMIN, Vinod ADIVARAHAN, Ashay CHITNIS, Shuai WU, Jpn. J. Appl. Phys. Vol. 41 (2002)
    [21] X. Guo and E. F. Schubert, JOURNAL OF APPLIED PHYSICS. VOLUME 90, NUMBER 8 15 OCTOBER 2001
    [22] M.S. Minskey, M. White, and E.L. Hu, Appl Phys Lett. Vol 68, 1531(1996)
    [23]C. Youtsey and I. Adesida, Appl. Phys. Lett, Vol71, 2151 (1997)
    [24] H.W. Choi, C.W. Jeon, IEEE Photonics Technology Letters, Vol 16, No1, 2004
    [25] V. Adivarahan, S.Wu, W.H. Sun, Appl. Phys. Lett, Vol.85, No10 (2004)
    [26] N.Blanc,P. Gueret, Appl. Phys. Lett, Vol.56, No22 (1990)
    Chap2 Reference
    [1] D.J. Fu, T.W. Kang, Appl.Phys. Lett. Vol. 78,1309 (2001)
    [2] X. Guo and E. F. Schubert, JOURNAL OF APPLIED PHYSICS VOLUME 90,No 8, 15 OCTOBER 2001
    [3] R.A. Mair, K.C. Zeng, J.Y. Lin, H.X. Jiang, Applied Physics Letters, Vol 72,No 13, 1998
    [4] H.X. Jiang, J.Y. Lin, K.C. Zeng, Applied Physics Letters, Vol 75, No 6, 1999
    [5] R.P. Wang, M.M. Dumitrescu, J. Appl. Phys, 81, 3391 (1997)
    [6] Adelmo Ortiz-Conde, Francisco J., Juan Muci, Solid-State Electronics 44 (2000) 1861-1864
    [7] J.C. Ranuarez, A. Ortiz-Conde, Microelectronics Reliability 40 (2000) 355-358
    [8] A. Kaminski, J.J. Marchand, A. Laugier, Solid-State Electronics 43 (1999) 741-745
    Chap3 Reference
    [1] H.W. Choi, C.W. Jeon, Applied physics letter 86,021101 (2005)
    [2] H.W. Choi, C.W. Jeon, IEEE Photonic Technology Letters, Vol.16 NO.1 (2004)
    Chap4 Reference
    [1] H. C. Cassey Jr., J. Muth, S. Krishnankutty, and J. M. Zavada, “Dominance
    of tunneling current and band filling in InGaN/AlGaN double
    heterostructure blue light-emitting diodes,” Appl. Phys. Lett., vol. 68,
    pp. 2867–2868, 1996.
    [2] P. Perlin, M. Osinski, P. G. Eliseev, V. A. Smagley, J. Mu, M. Banas, and
    P. Sartori, “Lowtemperature study of current and electroluminescence in
    InGaN/AlGaN/GaN double-heterostructure blue light emitting diodes,”
    Appl. Phys. Lett., vol. 69, pp. 1680–1682, 1996.
    [3] I. Martil, E. Redondo, and A. Ojeda, “Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III–V nitrides,” J. Appl. Phys., vol. 81, pp. 2442–2444, 1997.
    [4] Willardson Beer, Semiconductors and semimetals, Vol 7, chap6

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