碲化鉍系統為室溫範圍有優異表現之熱電材料，許多研究嘗試將碲化鉍系統薄膜元件建立在可撓式基板上，但在製作過程有可能導入殘餘應力在熱電薄膜中。本研究計畫係在聚亞醯胺基板上預先施加一單軸向張應力，以濺鍍方式沉積P型和N型兩種碲化鉍系統熱電薄膜，經高溫熱退火後，量測薄膜之殘餘壓應力及熱電性質，藉此探討薄膜殘餘壓應力對聚亞醯胺基板上之碲化鉍系薄膜熱電傳輸性質之影響。
研究結果顯示隨著基板拉伸形變量的增加，當退火處理後釋放外加負載釋後在薄膜中之殘餘壓應力也隨之增加。而隨著殘餘壓應力的增加，載子濃度在P型熱電薄膜中呈現上升而在N型熱電薄膜中呈現下降的趨勢。P型載子濃度上升是由於在P型熱電薄膜內之缺陷主要為SbTe錯位缺陷，壓應力之存在降低SbTe錯位缺陷的生成能，提升SbTe錯位缺陷的濃度。N型載子濃度下降則是由於在N型熱電薄膜內之缺陷主要為VTe空位缺陷，壓應力的存在將使空位缺陷濃度減少。在殘餘壓應力作用下此兩種薄膜的熱電功率因子皆獲得改善，此結果顯示透過應力的調控可進一步提升在可撓式基板上碲化鉍系薄膜之熱電性質。

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