奈米級NAND型氮化物儲存快閃記憶體技術之研究

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研究生：	徐子軒 Hsu, Tzu-Hsuan
論文名稱：	奈米級NAND型氮化物儲存快閃記憶體技術之研究 A Study on Nano-Scale SONOS-Type NAND Flash Memory Technologies
指導教授：	金雅琴 King, Ya-Chin
口試委員:
學位類別：	博士 Doctor
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2009
畢業學年度：	98
語文別：	英文
論文頁數：	112
中文關鍵詞：	快閃記憶體、氮化物電荷儲存、不均勻的電場分佈
相關次數：	點閱：3 下載：0
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本論文對於SONOS-type氮化物電荷儲存NAND型快閃記憶體元件作深入的探討。首先，分析SONOS 和BE-SONOS結構的本質特性，發現SONOS (底層氧化層>40A) 的抹除機制是一種電子由缺陷跳脫的行為，BE-SONOS是以通道電洞注入的方式來抹除所儲存的電荷。由於此有效率的抹除方式，BE-SONOS呈現快速的抹除速度和較佳的重複寫入抹除次數。
另一方面，對不同的STI結構對SONOS-type快閃記憶體電特性所造成的影響，進行分析討論。藉由量測及模擬之特性發現，此效應主要因為元件上不均勻的電場分佈，造成寫入和抹除後電荷分布的不均勻。藉由寫入抹除過程中量測元件的gm和Sw變化行為及TCAD三維模擬下寫入抹除過程中電流和電場變化的暫態分析，以佐證所提出之理論模型。一種新型的body-tied FinFET BE-SONOS結構也在本論文首次提出；此結構利用電場局部增強效應以實現高速操作的NAND快閃記憶體。
相對於傳統NAND型快閃記憶體採用FN穿透機制來做寫入和抹除的動作，本論文提出了一種新的基板暫態熱載子注入機制來作為寫入和抹除的方式。這項新穎的操作機制可用較低電壓完成寫入和抹除的動作，並能於記憶體陣列中隨意進行讀取、寫入及抹除的動作，適用於編碼型(code)和資料儲存型(data)快閃記憶體的應用。

Contents
Abstract (Chinese)…………………………I
Abstract (English)…………………………II
Acknowledgement (Chinese)…………………IV
Contents…………………………………………V
List of Tables……………………………………………………………...IX
List of Figures…………………………………………………………….…X

Chapter 1  Introduction……….…………………………………..………1
1.1    Background and Motivation………...…………..……………..………………..1
1.2    Thesis Organization………………..…………………………………………….3

Chapter 2  Review of Flash Memories.………………….…..…..………4
2.1    Solid-State Memory………...……………………………………………………4
2.2    Nonvolatile Memory………….………………………………………………….5
2.2.1    Evolution of Flash Memory……...……………….……………………….5
2.2.2    What is Flash Memory ?…..……….………………………..…………..5
2.2.3    Main Stream of Flash Memory…………….……………………………..6
2.2.4    Scaling Challenges of Floating Gate NAND Flash Memory…...……..8
2.2.5    Charge-Trapping Flash Memory………….…...……….……….…..10
2.2.6    SONOS-Type NAND Flash Memory……….………………..………11
2.2.7    Hot carrier mode NAND Flash Memory………………………………13
2.3    Summary………………………………………………………………………...14

Chapter 3 Intrinsic Study of SONOS and Bandgap Engineered (BE)-SONOS……………………..……………………………..……..24
3.1    Introduction…………….…………………………………………………….…24
3.2    Sample and Experiment Description………………………………………...25
3.3    Program Characteristics (ISPP)………………………..…………………….25
3.4    Erase Characteristics…………………………………….……………………..28
3.5    Endurance Property…………………………………..………………..….…30
3.6    Read Disturbance and Data Retention……………….……………………….30
3.7    Summary…………………..…………………………………………………..31

Chapter 4  Local Trapping and Edge Effect in SONOS-Type NAND Flash Device ..……………..………………….……..……………..………41
4.1    Introduction………………………….…..…………………………….…….41
4.2    Sample Description…………………………….…….……………………….42
4.3    Electric Field Analysis…………………………..…………….……………42
4.4    Effects on Program/Erase Characteristics.…………………….…………43
4.5    Read Disturb Comparison…………………………………………………45
4.6    Retention Characteristics…………...……………………………………..…46
4.7    Summary……………………………..………………………………………….47

Chapter 5  High-Speed Rounded Tip Body-Tied FinFET BE-SONOS NAND Flash …..……………….……….……………...………………57
5.1    Introduction…………………………….………………………..……………57
5.2    Sample Preparation and Experimental Setup……………..………………….57
5.3    Theoretical Model………………………….…………………………………58
5.4    Cell Characteristics and Field Enhancement Factor Extraction……...…….60
5.5    Non-uniform Injection Effect..…………………………..………………….62
5.6    MLC NAND Flash Application…………………..………………………..64
5.7    Summary……………………………………..……………….………………66

Chapter 6 Channel-Program-Erase Technique with Substrate Hot Carrier Injection for SONOS-Type NAND Application………………82
6.1     Introduction………………………….…………..…..……..……………..82
6.2    Experimental Description………………………………………………….83
6.3    Results and Discussion………………………………………………………..84
6.4    Divided-Substrate-Bit-Line (DSB-NAND) Application………..…………86
6.5    Summary…………………………………………………………………….88

Chapter 7  Conclusions…………………….......................…………98

Appendix…………………….………………………..…………………..100
A: Explanation of the Theoretical Derivation of Eqs. (1-2)……..…….…….100
Reference…………………….………………………..…………………..102
Publication List………….………………………..…………………..110

                                

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